micron
Results: 206
| Image | Part # | Mfr. | Supplier | Description | DC | Availability | Pricing | Qty. | Package / Case | Packaging | Memory Size | Tariff Active | ReachStatus | RohsStatus | MoistureSensitivityLevel | ExportControlClassNumber | HtsusCode | Memory Type | Transfer Rate (Mb/s, MT/s, MHz) | Mounting Type | Operating Temperature | Technology | Voltage - Supply | Clock Frequency | Supplier Device Package | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page | type | Form Factor | Speed - Read | Speed - Write | Features | Refresh Current | Access Time | interface | Data Retention - TDR (Year) | Program / Erase Cycles | Page Programming Time (Tpp) | Block Erase Time(tBE) | Standby Supply Current | Write Cycle Time(tWC) | grade | Qualification | |||||||||||||||||||
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 | MT41K256M16TW-107 AAT:P | micron | NoyanElectronic | SDRAM - DDR3L Memory IC 4Gbit Parallel 933 MHz 20 ns 96-FBGA (8x14) | 251 in stock |
Qty in reel: 102pcs/reel | 96-TFBGA | FBGA-96 | 4Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -40℃~+105℃ | SDRAM - DDR3L | 1.283V~1.45V;32mA | 933MHz | 96-FBGA (8x14) | DDR3L SDRAM | 256M x 16 | Parallel | Auto self-refresh;Auto precharge function;Asynchronous reset function;Data mask function;Dynamic on-chip termination;ZQ calibration function;Write leveling function | 15mA | 20 ns | Automotive | AEC-Q100 | ||||||||||||||||||||||||||||||||||
 | MT25QU256ABA8E12-1SIT | micron | NoyanElectronic | FLASH - NOR Memory IC 256Mbit SPI - Quad I/O 133 MHz 24-T-PBGA (6x8) | 246 in stock |
Qty in reel: 2500pcs/reel | 24-TBGA | TPBGA-24(6x8) | 256Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NOR | 1.7V~2V | 133MHz | 24-T-PBGA (6x8) | FLASH | 32M x 8 | SPI - Quad I/O | 8ms, 2.8ms | Write enable latch;Hardware write protection;Software write protection;Absolute write protection | SPI | 20 Years | 100,000 cycles | 120us | |||||||||||||||||||||||||||||||||
 | MT48LC4M32B2P-6A IT:L | micron | NoyanElectronic | SDRAM Memory IC 128Mbit Parallel 167 MHz 5.4 ns 86-TSOP II | 77 in stock |
Qty in reel: 2000pcs/reel | 86-TFSOP (0.400", 10.16mm Width) | TSOP-86-10.2mm | 128Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0002 | Volatile | Surface Mount | -40℃~+85℃ | SDRAM | 3V~3.6V;120mA | 167MHz | 86-TSOP II | DRAM | 4M x 32 | Parallel | 12ns | High-speed clock synchronization;Auto precharge;Automatic column address generation;Auto refresh | 3mA | 5.4 ns | |||||||||||||||||||||||||||||||||||
 | MT41K256M16TW-093:P | micron | NoyanElectronic | SDRAM - DDR3L Memory IC 4Gbit Parallel 1.066 GHz 20 ns 96-FBGA (8x14) | 104 in stock |
Qty in reel: 2000pcs/reel | 96-TFBGA | FBGA-96(8x14) | 4Gbit | False | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | 0℃~+95℃ | SDRAM - DDR3L | 1.283V~1.45V;34mA | 1.066GHz | 96-FBGA (8x14) | DDR3L SDRAM | 256M x 16 | Parallel | Auto self-refresh;Auto precharge function;Asynchronous reset function;Data mask function;Dynamic on-chip termination;ZQ calibration function;Write leveling function | 15mA | 20 ns | ||||||||||||||||||||||||||||||||||||
 | MT29F1G01ABAFDWB-IT:F | micron | NoyanElectronic | FLASH - NAND Memory IC 1Gbit SPI 8-UPDFN (8x6) (MLP8) | 46 in stock |
Qty in reel: 4000pcs/reel | 8-UDFN | UPDFN-8 | 1Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NAND | 2.7V~3.6V | 133MHz | 8-UPDFN (8x6) (MLP8) | FLASH | 1G x 1 | SPI | Read buffer function;Write enable latch;Hardware reset function;Software write protection function;Hardware write protection function;ECC error correction function;OTP region write protection and lock function | SPI | 10 years | 100,000 cycles | 220us | 2ms | |||||||||||||||||||||||||||||||||
 | MT40A1G16TB-062E:F | micron | NoyanElectronic | SDRAM - DDR4 Memory IC 16Gbit Parallel 1.5 GHz 19 ns 96-FBGA (7.5x13) | 60 in stock |
Qty in reel: 2000pcs/reel | 96-TFBGA | FBGA-96(7.5x13) | 16Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | 0℃~+95℃ | SDRAM - DDR4 | 1.14V~1.26V;70mA | 1.5GHz | 96-FBGA (7.5x13) | DDR4 SDRAM | 1G x 16 | Parallel | 15ns | Auto self-refresh;Auto precharge function;Write leveling function;Data mask function;Dynamic on-chip termination;CRC function | 11mA | 19 ns | |||||||||||||||||||||||||||||||||||
 | MT40A512M16TB-062E IT:R | micron | NoyanElectronic | SDRAM - DDR4 Memory IC 8Gbit Parallel 1.6 GHz 19 ns 96-FBGA (7.5x13) | 39 in stock |
Qty in reel: 2000pcs/reel | 96-TFBGA | FBGA-96(7.5x13) | 8Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -40℃~+95℃ | SDRAM - DDR4 | 1.14V~1.26V;- | 1.6GHz | 96-FBGA (7.5x13) | DDR4 SDRAM | 512M x 16 | Parallel | 15ns | Auto self-refresh;Write leveling function;Dynamic on-chip termination;CRC function;Data mask function;Auto precharge function | 19 ns | ||||||||||||||||||||||||||||||||||||
 | MT40A512M16TB-062E:R | micron | NoyanElectronic | SDRAM - DDR4 Memory IC 8Gbit Parallel 1.6 GHz 19 ns 96-FBGA (7.5x13) | 311 in stock |
Qty in reel: 2000pcs/reel | 96-TFBGA | FBGA-96 | 8Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | 0℃~+95℃ | SDRAM - DDR4 | 1.14V~1.26V;59mA | 1.6GHz | 96-FBGA (7.5x13) | DDR4 SDRAM | 512M x 16 | Parallel | 15ns | Auto self-refresh;Auto precharge function;Write leveling function;CRC function;Dynamic on-chip termination;ZQ calibration function | 8mA | 19 ns | |||||||||||||||||||||||||||||||||||
 | MT25QL128ABA8ESF-0SIT | micron | NoyanElectronic | FLASH - NOR Memory IC 128Mbit SPI - Quad I/O 133 MHz 16-SO | 1000 in stock |
Qty in reel: 1000pcs/reel | 16-SOIC (0.295", 7.50mm Width) | SOP-16-300mil | 128Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NOR | 2.7V~3.6V | 133MHz | 16-SO | FLASH | 16M x 8 | SPI - Quad I/O | 8ms, 2.8ms | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | SPI | 20 Years | 100,000 cycles | 150uA | |||||||||||||||||||||||||||||||||
 | MT29F1G08ABAEAWP:E | micron | NoyanElectronic | 1Gbit 2.7V~3.6V Parallel TSOPI-48 Memory (ICs) RoHS | 112 in stock |
Qty in reel: 1000pcs/reel | TSOPI-48 | 1Gbit | 0℃~+70℃ | 2.7V~3.6V | Read buffer function;Copy back write function;Hardware reset function;Hardware write protection function;OTP region write protection and lock function | Parallel | 100,000 cycles | 200us | 700us | 100uA | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||
 | MT40A512M16LY-075:E | micron | NoyanElectronic | SDRAM - DDR4 Memory IC 8Gbit Parallel 1.33 GHz 96-FBGA (7.5x13.5) | 128 in stock |
Qty in reel: 2000pcs/reel | 96-TFBGA | FBGA-96 | 8Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | 0℃~+95℃ | SDRAM - DDR4 | 1.14V~1.26V;- | 1.33GHz | 96-FBGA (7.5x13.5) | DDR4 SDRAM | 512M x 16 | Parallel | Auto self-refresh;Auto precharge function;Write leveling function;Dynamic on-chip termination;CRC function;Data mask function | ||||||||||||||||||||||||||||||||||||||
 | MT40A256M16GE-083EIT:B | micron | NoyanElectronic | 1.14V~1.26V 4Gbit 1.2GHz DDR4 SDRAM FBGA-96 Memory (ICs) RoHS | 6 in stock |
Qty in reel: 2000pcs/reel | FBGA-96 | 4Gbit | -40℃~+95℃ | 1.14V~1.26V;69mA | 1.2GHz | DDR4 SDRAM | Auto self-refresh;Write leveling function;Dynamic on-chip termination;CRC function;Data mask function;Auto precharge function | 9mA | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | MT48H16M32LFB5-6 IT:C | micron | NoyanElectronic | SDRAM - Mobile LPSDR Memory IC 512Mbit Parallel 166 MHz 5 ns 90-VFBGA (8x13) | 1 in stock |
Qty in reel: 1368pcs/reel | 90-VFBGA | VFBGA-90(8x13) | 512Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0028 | Volatile | Surface Mount | -40℃~+85℃ | SDRAM - Mobile LPSDR | 1.7V~1.95V;90mA | 166MHz | 90-VFBGA (8x13) | DRAM | 16M x 32 | Parallel | 15ns | High-speed clock synchronization;Auto precharge;Automatic column address generation;Auto refresh | 5 ns | ||||||||||||||||||||||||||||||||||||
 | MT28EW512ABA1LPC-0SIT | micron | NoyanElectronic | FLASH - NOR Memory IC 512Mbit Parallel 95 ns 64-LBGA (11x13) | 3 in stock |
Qty in reel: 2000pcs/reel | 64-LBGA | LBGA-64 | 512Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NOR | 2.7V~3.6V | 64-LBGA (11x13) | FLASH | 64M x 8, 32M x 16 | Parallel | 60ns | Hardware write protection;Software write protection | 95 ns | Parallel | 20 Years | 100,000 cycles | 200ms@(128KB) | |||||||||||||||||||||||||||||||||
 | MT46V16M16CY-5B IT:M | micron | NoyanElectronic | SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 60-FBGA (8x12.5) | 5 in stock |
Qty in reel: 1368pcs/reel | 60-TFBGA | FBGA-60(8x12.5) | 256Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0028 | Volatile | Surface Mount | -40℃~+85℃ | SDRAM - DDR | 180mA;2.5V~2.7V | 200MHz | 60-FBGA (8x12.5) | DDR SDRAM | 16M x 16 | Parallel | 15ns | Auto precharge function;Data mask function | 4mA | 700 ps | |||||||||||||||||||||||||||||||||||
 | MT41K512M8DA-107 AAT:P | micron | NoyanElectronic | SDRAM - DDR3L Memory IC 4Gbit Parallel 933 MHz 20 ns 78-FBGA (8x10.5) | 5 in stock |
Qty in reel: 2000pcs/reel | 78-TFBGA | FBGA-78(8x10.5) | 4Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -40℃~+105℃ | SDRAM - DDR3L | 32mA;1.283V~1.45V | 1.866GHz | 78-FBGA (8x10.5) | DDR3L SDRAM | 512M x 8 | Parallel | Auto self-refresh;Auto precharge function;Asynchronous reset function;Data mask function;Dynamic on-chip termination;ZQ calibration function;Write leveling function | 20 ns | Automotive | AEC-Q100 | |||||||||||||||||||||||||||||||||||
 | MT25QU256ABA8E12-0AAT | micron | NoyanElectronic | FLASH - NOR Memory IC 256Mbit SPI - Quad I/O 133 MHz 24-T-PBGA (6x8) | 1 in stock |
Qty in reel: 1122pcs/reel | 24-TBGA | TPBGA-24(6x8) | 256Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+105℃ | FLASH - NOR | 1.7V~2V | 133MHz | 24-T-PBGA (6x8) | FLASH | 32M x 8 | SPI - Quad I/O | 8ms, 2.8ms | Write enable latch;Hardware write protection;Software write protection;Absolute write protection;Power-on reset | SPI | 20 Years | 100,000 cycles | Automotive | AEC-Q100 | ||||||||||||||||||||||||||||||||
 | MT48LC2M32B2B5-6A IT:J | micron | NoyanElectronic | SDRAM Memory IC 64Mbit Parallel 167 MHz 5.4 ns 90-VFBGA (8x13) | 4 in stock |
Qty in reel: 1440pcs/reel | 90-VFBGA | VFBGA-90(8x13) | 64Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0002 | Volatile | Surface Mount | -40℃~+85℃ | SDRAM | 3V~3.6V;120mA | 167MHz | 90-VFBGA (8x13) | DRAM | 2M x 32 | Parallel | 12ns | High-speed clock synchronization;Auto precharge;Automatic column address generation;Auto refresh | 3mA | 5.4 ns | |||||||||||||||||||||||||||||||||||
 | MT29F1G08ABAEAH4-AATX:E | micron | NoyanElectronic | FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (9x11) | 2 in stock |
Qty in reel: 1260pcs/reel | 63-VFBGA | VFBGA-63(9x11) | 1Gbit | False | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+105℃ | FLASH - NAND | 2.7V~3.6V | 63-VFBGA (9x11) | FLASH | 128M x 8 | Parallel | Read buffer function;Copy back write function;Hardware reset function;Hardware write protection function;ECC error correction function;OTP region write protection and lock function | Parallel | 10 years | 100,000 cycles | 200us | 700us | 20ns | |||||||||||||||||||||||||||||||||
 | MT47H128M16RT-25E AIT:C | micron | NoyanElectronic | SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 84-FBGA (9x12.5) | 1 in stock |
Qty in reel: 1000pcs/reel | 84-TFBGA | FBGA-84(9x12.5) | 2Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -40℃~+95℃ | SDRAM - DDR2 | 1.7V~1.9V;90mA | 400MHz | 84-FBGA (9x12.5) | DDR2 SDRAM | 128M x 16 | Parallel | 15ns | Auto precharge function;Data mask function;Dynamic on-chip termination | 12mA | 400 ps | Automotive | AEC-Q100 | |||||||||||||||||||||||||||||||||
 | MT47H64M8SH-25E:H | micron | NoyanElectronic | SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 60-FBGA (8x10) | 1 in stock |
Qty in reel: 2000pcs/reel | 60-TFBGA | FBGA-60 | 512Mbit | False | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0028 | Volatile | Surface Mount | 0℃~+85℃ | SDRAM - DDR2 | 1.7V~1.9V;- | 400MHz | 60-FBGA (8x10) | DDR2 SDRAM | 64M x 8 | Parallel | 15ns | Auto precharge function;Data mask function;Dynamic on-chip termination | 400 ps | ||||||||||||||||||||||||||||||||||||
 | MT41K256M8DA-125 AIT:K TR | micron | NoyanElectronic | 2Gbit 1.283V~1.45V 800MHz DDR3L SDRAM FBGA-78(8x10.5) Memory (ICs) RoHS | 3 in stock |
Qty in reel: 2000pcs/reel | FBGA-78(8x10.5) | 2Gbit | -40℃~+95℃ | 1.283V~1.45V | 800MHz | DDR3L SDRAM | Auto self-refresh;Auto precharge function;Asynchronous reset function;Data mask function;Dynamic on-chip termination;ZQ calibration function;Write leveling function | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | MT40A2G8JC-062E:E | micron | NoyanElectronic | SDRAM - DDR4 Memory IC 16Gbit Parallel 1.6 GHz 19 ns 78-FBGA (9x11) | 1 in stock |
Qty in reel: 2000pcs/reel | 78-TFBGA | FBGA-78(9x11) | 16Gbit | False | REACH Unaffected | ROHS3 Compliant | 3A991B1A | 8542.32.0071 | Volatile | Surface Mount | 0℃~+95℃ | SDRAM - DDR4 | 1.14V~1.26V | 1.6GHz | 78-FBGA (9x11) | DDR4 SDRAM | 2G x 8 | Parallel | 15ns | 19 ns | ||||||||||||||||||||||||||||||||||||||
 | MT29F2G08ABAGAWP-IT:G | micron | NoyanElectronic | FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP I | 201 in stock |
Qty in reel: 1000pcs/reel | 48-TFSOP (0.724", 18.40mm Width) | TFSOP-48-18.4mm | 2Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NAND | 2.7V~3.6V | 48-TSOP I | FLASH | 256M x 8 | Parallel | Read buffer function;Copy back write function;Hardware reset function;Hardware write protection function;ECC error correction function;OTP region write protection and lock function | Parallel | 10 years | 100,000 cycles | 200us | 2ms | 20ns | |||||||||||||||||||||||||||||||||
 | MTFC4GACAALT-4M IT | micron | NoyanElectronic | FLASH - NAND Memory IC 32Gbit MMC 100-TBGA (14x18) | 10 in stock |
Qty in reel: 1000pcs/reel | 100-TBGA | TBGA-100 | 32Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NAND | 2.7V~3.6V | 100-TBGA (14x18) | FLASH | 4G x 8 | MMC |
