مدار مجتمع (آی سی) آی‌سی حافظه تراشهٔ حافظه

Product Attributes

Features

• Single-level cell (SLC) technology
• Density: 512Mb
• Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65·VCC (I/O buffers)
• Asynchronous random/page read – Page size: 16 words or 32 bytes – Page access: 20ns – Random access: 95ns (VCC = VCCQ = 2.7 - 3.6V) – Random access: 100ns (VCCQ = 1.65 - VCC)
• Buffer program (512-word program buffer) – 2.0 MB/s (TYP) when using full buffer program – 2.5 MB/s (TYP) when using accelerated buffer program (VHH)
• Word/Byte program: 25us per word (TYP)
• Block erase (128KB): 0.2s (TYP)
• Memory organization – Uniform blocks: 128KB or 64KW each – x8/x16 data bus
• Program/erase suspend and resume capability – Read from another block during a PROGRAM SUSPEND operation – Read or program another block during an ERASE SUSPEND operation
• Unlock bypass, block erase, chip erase, and write to buffer capability
• BLANK CHECK operation to verify an erased block
• CYCLIC REDUNDANCY CHECK (CRC) operation to verify a program pattern
• VPP/WP# protection – Protects first or last block regardless of block protection settings
• Software protection – Volatile protection – Nonvolatile protection – Password protection
• Extended memory block – 128-word (256-byte) block for permanent, secure identification – Programmed or locked at the factory or by the customer
• JESD47-compliant – 100,000 (minimum) ERASE cycles per block – Data retention: 20 years (TYP)
• RoHS-compliant, halogen-free packaging
• Operating temperature – Ambient: -40℃ to +85℃