نیمه‌هادی‌ گسسته ماژول‌ درایور قدرت

Product Attributes

Introduction

This GaNFast power IC integrates a high performance eMode GaN FET with integrated gate drive to achieve unprecedented high-frequency and high efficiency operation. GaNSense technology is also integrated which enables real-time, accurate sensing of voltage, current and temperature to further improve performance and robustness not achieved by any discrete GaN or discrete silicon device. GaNSense enables integrated loss-less current sensing which eliminates external current sensing resistors and increases system efficiency. GaNSense also enables short circuit and over-temperature protection to increase system robustness, while auto-standby mode increases light, tiny & no-load efficiency. These GaN ICs combine the highest dV/dt immunity, high-speed integrated drive and industry-standard low-profile, low-inductance, SMT QFN packaging to enable designers to achieve simple, quick and reliable solutions. Navitas’ GaN IC technology extends the capabilities of traditional topologies such as flyback, half-bridge, buck/boost, LLC and other resonant converters to reach MHz+ frequencies with very high efficiencies and low EMI to achieve unprecedented power densities at a very attractive cost structure.

Features

• Integrated loss-less current sensing
• Short-circuit protection
• Over-temperature protection
• Autonomous low-current standby mode
• Auto-standby mode input
• 6×8 mm footprint, 0.85 mm profile
• Minimized package inductance
• Large cooling pad
• RoHS, Pb-free, REACH-compliant
• Up to 40% energy savings vs Si solutions
• System level 4 kg CO₂ Carbon Footprint reduction

Applications

• AC-DC, DC-DC, DC-AC
• QR flyback, AHB, Buck, Boost, Half bridge, Full bridge, LLC resonant, Class D, PFC
• Wireless power, Solar Micro-inverters
• LED lighting, TV SMPS, Server, Telecom