micron
Results: 206
| Image | Part # | Mfr. | Supplier | Description | DC | Availability | Pricing | Qty. | Package / Case | Packaging | Memory Size | Tariff Active | ReachStatus | RohsStatus | MoistureSensitivityLevel | ExportControlClassNumber | HtsusCode | Memory Type | Transfer Rate (Mb/s, MT/s, MHz) | Mounting Type | Operating Temperature | Technology | Voltage - Supply | Clock Frequency | Supplier Device Package | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page | type | Form Factor | Speed - Read | Speed - Write | Features | Refresh Current | Access Time | interface | Data Retention - TDR (Year) | Program / Erase Cycles | Page Programming Time (Tpp) | Block Erase Time(tBE) | Standby Supply Current | Write Cycle Time(tWC) | grade | Qualification | |||||||||||||
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![]() | MT28EW256ABA1HJS-0SIT | micron | FLASH - NOR Memory IC 256Mbit Parallel 75 ns 56-TSOP | 56-TFSOP (0.724", 18.40mm Width) | TFSOP-56-18.4mm | 256Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NOR | 2.7V~3.6V | 56-TSOP | FLASH | 32M x 8, 16M x 16 | Parallel | 60ns | 75 ns | Parallel | 20 Years | 100,000 cycles | 20ns | 200ms@(128KB) | ||||||||||||||||||||||||||||||
![]() | MT53E1G32D2FW-046 IT:B | micron | NoyanElectronic | SDRAM - Mobile LPDDR4X Memory IC 32Gbit Parallel 2.133 GHz 3.5 ns 200-TFBGA (10x14.5) |
Qty in reel: 2000pcs/reel | 200-TFBGA | 200-TFBGA(10x14.5) | 32Gbit | True | REACH Unaffected | Unknown | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -40℃~+95℃ | SDRAM - Mobile LPDDR4X | 1.06V~1.17V;- | 2.133GHz | 200-TFBGA (10x14.5) | LPDDR4X SDRAM | 1G x 32 | Parallel | 18ns | Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function;Asynchronous reset function;Data mask function | 3.5 ns | |||||||||||||||||||||||||||||||
![]() | MT41K128M16JT-125 AIT:K | micron | NoyanElectronic | SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 13.75 ns 96-FBGA (8x14) |
Qty in reel: 2000pcs/reel | 96-TFBGA | 96-FBGA(8x14) | 2Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -40℃~+95℃ | SDRAM - DDR3L | 1.283V~1.45V;- | 800MHz | 96-FBGA (8x14) | DDR3L SDRAM | 128M x 16 | Parallel | Auto self-refresh;Auto precharge function;Asynchronous reset function;Data mask function;Dynamic on-chip termination;ZQ calibration function;Write leveling function | 13.75 ns | Automotive | AEC-Q100 | ||||||||||||||||||||||||||||||
![]() | MT28EW01GABA1LJS-0SIT | micron | NoyanElectronic | FLASH - NOR Memory IC 1Gbit Parallel 95 ns 56-TSOP |
Qty in reel: 1600pcs/reel | 56-TFSOP (0.724", 18.40mm Width) | TSOP-56-18.4mm | 1Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NOR | 2.7V~3.6V | 56-TSOP | FLASH | 128M x 8, 64M x 16 | Parallel | 60ns | Hardware write protection;Software write protection;Power-on reset | 95 ns | Parallel | 20 Years | 100,000 cycles | 200ms@(128KB) | ||||||||||||||||||||||||||||
![]() | MT41K128M16JT-125 AAT:K | micron | NoyanElectronic | SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 13.75 ns 96-FBGA (8x14) |
Qty in reel: 2000pcs/reel | 96-TFBGA | FBGA-96(8x14) | 2Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -40℃~+105℃ | SDRAM - DDR3L | 46mA;1.283V~1.45V | 800MHz | 96-FBGA (8x14) | DDR3L SDRAM | 128M x 16 | Parallel | Auto self-refresh;Auto precharge function;Asynchronous reset function;Data mask function;Dynamic on-chip termination;ZQ calibration function;Write leveling function | 12mA | 13.75 ns | Automotive | AEC-Q100 | |||||||||||||||||||||||||||||
![]() | MT25QU512ABB8ESF-0SIT | micron | FLASH - NOR Memory IC 512Mbit SPI - Quad I/O 133 MHz 16-SO | 16-SOIC (0.295", 7.50mm Width) | SO-16-300mil | 512Mbit | False | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NOR | 1.7V~2V | 133MHz | 16-SO | FLASH | 64M x 8 | SPI - Quad I/O | 8ms, 2.8ms | Write enable latch;Hardware write protection;Software write protection;Absolute write protection | SPI | 20 Years | 100,000 cycles | |||||||||||||||||||||||||||||||
![]() | MT25QL128ABA1EW7-0SIT | micron | NoyanElectronic | FLASH - NOR Memory IC 128Mbit SPI - Quad I/O 133 MHz 8-WPDFN (6x5)(MLP8) |
Qty in reel: 4000pcs/reel | 8-WDFN Exposed Pad | DFN-8(5x6) | 128Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NOR | 2.7V~3.6V | 133MHz | 8-WPDFN (6x5)(MLP8) | FLASH | 16M x 8 | SPI - Quad I/O | 8ms, 2.8ms | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | SPI | 20 Years | 100,000 cycles | 150uA | ||||||||||||||||||||||||||||
![]() | MT25QU128ABA1ESE-0SIT | micron | NoyanElectronic | FLASH - NOR Memory IC 128Mbit SPI - Quad I/O 133 MHz 8-SO |
Qty in reel: 1500pcs/reel | 8-SOIC (0.209", 5.30mm Width) | SO-8 | 128Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NOR | 1.7V~2V | 133MHz | 8-SO | FLASH | 16M x 8 | SPI - Quad I/O | 8ms, 2.8ms | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | SPI | 20 Years | 100,000 cycles | 12uA | ||||||||||||||||||||||||||||
![]() | MT28EW128ABA1HPC-0SIT | micron | NoyanElectronic | FLASH - NOR Memory IC 128Mbit Parallel 95 ns 64-LBGA (11x13) |
Qty in reel: 2500pcs/reel | 64-LBGA | LBGA-64 | 128Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NOR | 2.7V~3.6V | 64-LBGA (11x13) | FLASH | 16M x 8, 8M x 16 | Parallel | 60ns | Hardware write protection;Software write protection;Power-on reset | 95 ns | Parallel | 20 Years | 100,000 cycles | 200ms@(128KB) | 50uA | |||||||||||||||||||||||||||
![]() | MT25QU02GCBB8E12-0SIT | micron | NoyanElectronic | FLASH - NOR Memory IC 2Gbit SPI - Quad I/O 133 MHz 24-T-PBGA (6x8) |
Qty in reel: 2500pcs/reel | 24-TBGA | TPBGA-24(6x8) | 2Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NOR | 1.7V~2V | 166MHz | 24-T-PBGA (6x8) | FLASH | 256M x 8 | SPI - Quad I/O | 8ms, 2.8ms | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | SPI | 20 Years | 100,000 cycles | 1.8ms | ||||||||||||||||||||||||||||
![]() | MT41K512M8DA-107 IT:P | micron | SDRAM - DDR3L Memory IC 4Gbit Parallel 933 MHz 20 ns 78-FBGA (8x10.5) | 78-TFBGA | FBGA-78 | 4Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -40℃~+95℃ | SDRAM - DDR3L | 29mA;1.283V~1.45V | 933MHz | 78-FBGA (8x10.5) | DDR3L SDRAM | 512M x 8 | Parallel | Auto self-refresh;Auto precharge function;Write leveling function;Dynamic on-chip termination;Asynchronous reset function;Data mask function;ZQ calibration function | 15mA | 20 ns | |||||||||||||||||||||||||||||||||
![]() | MT53D1024M32D4DT-053 WT:D | micron | NoyanElectronic | SDRAM - Mobile LPDDR4 Memory IC 32Gbit 1.866 GHz 200-VFBGA (10x14.5) |
Qty in reel: 2000pcs/reel | 200-VFBGA | BGA | 32Gbit | False | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -30°C ~ 85°C (TC) | SDRAM - Mobile LPDDR4 | 1.1V | 1.866 GHz | 200-VFBGA (10x14.5) | DRAM | 1G x 32 | |||||||||||||||||||||||||||||||||||
![]() | MTFDHBL256TDQ-1AT12ATYY | micron | NoyanElectronic | Solid State Drive (SSD) FLASH - NAND (TLC) 256GB NVMe BGA |
Qty in reel: 72pcs/reel | Bulk | 256GB | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8523.51.0000 | Solid State Drive (SSD) FLASH - NAND (TLC) | -40°C ~ 105°C | NVMe | BGA | 2GB/s | 850MB/s | |||||||||||||||||||||||||||||||||||||||
![]() | MTA4ATF1G64AZ-3G2F1 | micron | NoyanElectronic | Memory Module DDR4 SDRAM 8GB 288-UDIMM |
Qty in reel: 100pcs/reel | 288-UDIMM | Tray | 8GB | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8473.30.1140 | DDR4 SDRAM | 3200 | ||||||||||||||||||||||||||||||||||||||||||
![]() | MTFDDAK240TDS-1AW1ZABYY | micron | Solid State Drive (SSD) FLASH - NAND (TLC) 240GB SATA III 2.5" 5V | Tray | 240GB | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8523.51.0000 | Solid State Drive (SSD) FLASH - NAND (TLC) | 5V | SATA III | 2.5" | 540MB/s | 310MB/s | |||||||||||||||||||||||||||||||||||||||||
![]() | MTFDHBK1T0TDP-1AT12AIYY | micron | Solid State Drive (SSD) FLASH - NAND (TLC) 1TB NVMe M.2 Module | Bulk | 1TB | True | REACH Unaffected | ROHS3 Compliant | 1 (Unlimited) | 3A991B1A | 8523.51.0000 | Solid State Drive (SSD) FLASH - NAND (TLC) | -40°C ~ 95°C | NVMe | M.2 Module | 2GB/s | 1.75GB/s | |||||||||||||||||||||||||||||||||||||||||
![]() | MTFDDAK1T9TDT-1AW15ABYY | micron | Solid State Drive (SSD) FLASH - NAND (TLC) 1.92TB SATA III 2.5" 5V | Bulk | 1.92TB | False | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8523.51.0000 | Solid State Drive (SSD) FLASH - NAND (TLC) | 5V | SATA III | 2.5" | 540MB/s | 520MB/s | |||||||||||||||||||||||||||||||||||||||||
![]() | MTFDDAK1T9TDT-1AW1ZABYY | micron | Solid State Drive (SSD) FLASH - NAND (TLC) 1.92TB SATA III 2.5" 5V | Bulk | 1.92TB | True | REACH Unaffected | ROHS3 Compliant | Not Applicable | 3A991B1A | 8523.51.0000 | Solid State Drive (SSD) FLASH - NAND (TLC) | 5V | SATA III | 2.5" | 540MB/s | 520MB/s | |||||||||||||||||||||||||||||||||||||||||
![]() | MTSD128AKC7MS-1WTCS | micron | Memory Card microSDXC™ 128GB Class 10, UHS Class 1 QLC | Bulk | 128GB | True | REACH Unknown | ROHS3 Compliant | Not Applicable | EAR99 | 8523.51.0000 | microSDXC™ | -25°C ~ 85°C | QLC | ||||||||||||||||||||||||||||||||||||||||||||
![]() | MTSD512AKC7MS-1WTCS | micron | Memory Card microSDXC™ 512GB Class 10, UHS Class 3 QLC | Bulk | 512GB | True | REACH Unknown | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8523.51.0000 | microSDXC™ | -25°C ~ 85°C | QLC | ||||||||||||||||||||||||||||||||||||||||||||
![]() | MTSD1T0AKC7MS-1WT | micron | Memory Card microSDXC™ 1TB Class 10, UHS Class 3 QLC | Bulk | 1TB | True | REACH Unaffected | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8523.51.0000 | microSDXC™ | -25°C ~ 85°C | QLC | ||||||||||||||||||||||||||||||||||||||||||||
![]() | MTA36ASF8G72PZ-3G2F1 | micron | Memory Module DDR4 SDRAM 64GB 288-RDIMM | 288-RDIMM | Tray | 64GB | True | REACH Unaffected | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8473.30.1140 | DDR4 SDRAM | 3200 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | MTA4ATF1G64HZ-3G2F1 | micron | Memory Module DDR4 SDRAM 8GB 260-SODIMM | 260-SODIMM | Tray | 8GB | True | REACH Unaffected | ROHS3 Compliant | Not Applicable | EAR99 | 8473.30.1140 | DDR4 SDRAM | 3200 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | MTA4ATF51264HZ-3G2R1 | micron | Memory Module DDR4 SDRAM 4GB 260-SODIMM | 260-SODIMM | Tray | 4GB | True | REACH Unaffected | ROHS3 Compliant | Not Applicable | EAR99 | 8473.30.1140 | DDR4 SDRAM | 3200 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | MTA8ATF2G64AZ-3G2F1 | micron | Memory Module DDR4 SDRAM 16GB 288-UDIMM | 288-UDIMM | Tray | 16GB | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8473.30.1140 | DDR4 SDRAM | 3200 |
























