micron
Results: 206
| Image | Part # | Mfr. | Supplier | Description | DC | Availability | Pricing | Qty. | Package / Case | Packaging | Memory Size | Tariff Active | ReachStatus | RohsStatus | MoistureSensitivityLevel | ExportControlClassNumber | HtsusCode | Memory Type | Transfer Rate (Mb/s, MT/s, MHz) | Mounting Type | Operating Temperature | Technology | Voltage - Supply | Clock Frequency | Supplier Device Package | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page | type | Form Factor | Speed - Read | Speed - Write | Features | Refresh Current | Access Time | interface | Data Retention - TDR (Year) | Program / Erase Cycles | Page Programming Time (Tpp) | Block Erase Time(tBE) | Standby Supply Current | Write Cycle Time(tWC) | grade | Qualification | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | MT28EW128ABA1HJS-0SIT | micron | FLASH - NOR Memory IC 128Mbit Parallel 95 ns 56-TSOP | 56-TFSOP (0.724", 18.40mm Width) | TSOP-56 | 128Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NOR | 2.7V~3.6V | 56-TSOP | FLASH | 16M x 8, 8M x 16 | Parallel | 60ns | Hardware write protection;Software write protection;Power-on reset | 95 ns | Parallel | 20 Years | 100,000 cycles | 200ms@(128KB) | ||||||||||||||||||||||||||||||
 | JS28F256P30TFE | micron | FLASH - NOR Memory IC 256Mbit Parallel 52MHz TSOP-56-14.0mm | TSOP-56-14.0mm | 256Mbit | -40℃~+85℃ | 1.7V~2V | 52MHz | Parallel | 10 years | 100,000 cycles | 310us | 65uA | |||||||||||||||||||||||||||||||||||||||||||||
 | MT41K128M8DA-107:J | micron | SDRAM - DDR3L Memory IC 1Gbit Parallel 933 MHz 20 ns 78-FBGA (8x10.5) | 78-TFBGA | FBGA-78(8x10.5) | 1Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0032 | Volatile | Surface Mount | 0℃~+95℃ | SDRAM - DDR3L | 1.283V~1.45V | 933MHz | 78-FBGA (8x10.5) | DDR3L SDRAM | 128M x 8 | Parallel | Auto self-refresh;Auto precharge function;Asynchronous reset function;Data mask function;Dynamic on-chip termination;Write leveling function;ZQ calibration function | 20 ns | ||||||||||||||||||||||||||||||||||
 | MT25QL256ABA8E12-0AAT | micron | FLASH - NOR Memory IC 256Mbit SPI - Quad I/O 133 MHz 24-T-PBGA (6x8) | 24-TBGA | TPBGA-24(6x8) | 256Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+105℃ | FLASH - NOR | 2.7V~3.6V | 133MHz | 24-T-PBGA (6x8) | FLASH | 32M x 8 | SPI - Quad I/O | 8ms, 2.8ms | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | SPI | 20 Years | 100,000 cycles | 400ms@(64KB) | Automotive | AEC-Q100 | ||||||||||||||||||||||||||||
 | MT41K256M8DA-107:K | micron | SDRAM - DDR3L Memory IC 2Gbit Parallel 933 MHz 20 ns 78-FBGA (8x10.5) | 78-TFBGA | FBGA-78(8x10.5) | 2Gbit | False | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | 0℃~+95℃ | SDRAM - DDR3L | 1.283V~1.45V | 933MHz | 78-FBGA (8x10.5) | DDR3L SDRAM | 256M x 8 | Parallel | Auto self-refresh;Auto precharge function;Asynchronous reset function;Output enable;Dynamic on-chip termination;ZQ calibration function;Write leveling function | 20 ns | ||||||||||||||||||||||||||||||||||
 | MT29F2G08ABAEAH4:E | micron | 2Gbit 2.7V~3.6V Parallel FBGA-63 Memory (ICs) RoHS | FBGA-63 | 2Gbit | 0℃~+70℃ | 2.7V~3.6V | Read buffer function;Copy back write function;Hardware reset function;Hardware write protection function;ECC error correction function;OTP region write protection and lock function | Parallel | 10 years | 100,000 cycles | 200us | 700us | |||||||||||||||||||||||||||||||||||||||||||||
 | MT47H64M16NF-25E AAT:M | micron | NoyanElectronic | SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-FBGA (8x12.5) |
Qty in reel: 2000pcs/reel | 84-TFBGA | FBGA-84(8x12.5) | 1Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0032 | Volatile | Surface Mount | -40℃~+105℃ | SDRAM - DDR2 | 1.7V~1.9V | 400MHz | 84-FBGA (8x12.5) | DDR2 SDRAM | 64M x 16 | Parallel | 15ns | Auto precharge function;Data mask function;Dynamic on-chip termination | 400 ps | Automotive | AEC-Q100 | |||||||||||||||||||||||||||||
 | MT25QL01GBBB8E12-0SIT | micron | NoyanElectronic | 2.7V~3.6V 1Gbit 133MHz SPI TPBGA-24 Memory (ICs) RoHS |
Qty in reel: 1122pcs/reel | TPBGA-24 | 1Gbit | -40℃~+85℃ | 2.7V~3.6V | 133MHz | Write enable latch;Hardware write protection;Software write protection | SPI | 20 Years | 100,000 cycles | 120us | |||||||||||||||||||||||||||||||||||||||||||
 | MT25QU128ABB8E12-0AUT | micron | FLASH - NOR Memory IC 128Mbit SPI - Quad I/O 133 MHz 24-T-PBGA (6x8) | 24-TBGA | TBGA-24 | 128Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0051 | Non-Volatile | Surface Mount | -40℃~+105℃ | FLASH - NOR | 1.7V~2V | 133MHz | 24-T-PBGA (6x8) | FLASH | 16M x 8 | SPI - Quad I/O | 8ms, 2.8ms | QSPI | 20 Years | 100,000 cycles | 1.8ms | 150uA | Automotive | AEC-Q100 | ||||||||||||||||||||||||||||
 | MT25QL128ABB8E12-0AUT | micron | FLASH - NOR Memory IC 128Mbit SPI - Quad I/O 133 MHz 24-T-PBGA (6x8) | 24-TBGA | TPBGA-24(6x8) | 128Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+125℃ | FLASH - NOR | 2.7V~3.6V | 133MHz | 24-T-PBGA (6x8) | FLASH | 16M x 8 | SPI - Quad I/O | 8ms, 2.8ms | Write enable latch;Hardware write protection;Software write protection;Absolute write protection | SPI | 20 Years | 100,000 cycles | 1.8ms | Automotive | AEC-Q100 | ||||||||||||||||||||||||||||
 | MT25QL256ABA8E12-0AUT | micron | FLASH - NOR Memory IC 256Mbit SPI - Quad I/O 133 MHz 5 ns 24-T-PBGA (6x8) | 24-TBGA | TPBGA-24(6x8) | 256Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+125℃ | FLASH - NOR | 2.7V~3.6V | 133MHz | 24-T-PBGA (6x8) | FLASH | 32M x 8 | SPI - Quad I/O | 1.8ms | Write enable latch;Hardware write protection;Software write protection;Absolute write protection;Power-on reset | 5 ns | SPI | 20 Years | 100,000 cycles | 1.8ms | Automotive | AEC-Q100 | |||||||||||||||||||||||||||
 | MT25QU128ABB1ESE-0AUT TR | micron | FLASH - NOR Memory IC 128Mbit SPI - Quad I/O 166 MHz 8-SO | 8-SOIC (0.209", 5.30mm Width) | SO-8 | 128Mbit | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+125℃ | FLASH - NOR | 1.7V~2V | 166MHz | 8-SO | FLASH | 16M x 8 | SPI - Quad I/O | 1.8ms | QSPI | 1.8ms | Automotive | AEC-Q100 | ||||||||||||||||||||||||||||||||
 | MT29F2G16ABBEAHC-AIT:E | micron | FLASH - NAND Memory IC 2Gbit Parallel 63-VFBGA (10.5x13) | 63-VFBGA | VFBGA-63(10.5x13) | 2Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NAND | 1.7V~1.95V | 63-VFBGA (10.5x13) | FLASH | 128M x 16 | Parallel | Read buffer function;Copy back write function;Hardware reset function;Hardware write protection function;ECC error correction function;OTP region write protection and lock function | Parallel | 10 years | 100,000 cycles | 200us | 700us | |||||||||||||||||||||||||||||||
 | MT29F4G08ABADAWP-ITX:D | micron | NoyanElectronic | FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP I |
Qty in reel: 960pcs/reel | 48-TFSOP (0.724", 18.40mm Width) | TFSOP-48-18.4mm | 4Gbit | False | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NAND | 2.7V~3.6V | 48-TSOP I | FLASH | 512M x 8 | Parallel | Read buffer function;Copy back write function;Hardware reset function;ECC error correction function;OTP region write protection and lock function;Hardware write protection function | Parallel | 10 years | 100,000 cycles | 200us | 700us | 20ns | ||||||||||||||||||||||||||||
 | MT42L32M32D1HE-18 IT:D | micron | SDRAM - Mobile LPDDR2 Memory IC 1Gbit Parallel 533 MHz 134-VFBGA (10x11.5) | 134-VFBGA | VFBGA-134(10x11.5) | 1Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0032 | Volatile | Surface Mount | -40℃~+85℃ | SDRAM - Mobile LPDDR2 | 1.14V~1.3V;- | 533MHz | 134-VFBGA (10x11.5) | DRAM | 32M x 32 | Parallel | 15ns | Automotive | AEC-Q100 | |||||||||||||||||||||||||||||||||
 | MT53D512M16D1DS-046 AAT:D | micron | SDRAM - Mobile LPDDR4 Memory IC 8Gbit 2.133 GHz 200-WFBGA (10x14.5) | 200-WFBGA | 200-WFBGA (10x14.5) | 8Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -40℃~+105℃ | SDRAM - Mobile LPDDR4 | 1.1V;45mA | 2.133GHz | 200-WFBGA (10x14.5) | LPDDR4 SDRAM | 512M x 16 | Auto self-refresh;Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function | 1mA | Automotive | AEC-Q100 | |||||||||||||||||||||||||||||||||
 | MT40A1G16RC-062E:B | micron | SDRAM - DDR4 Memory IC 16Gbit Parallel 1.6 GHz 19 ns 96-FBGA (10x13) | 96-TFBGA | FBGA-96(10x13) | 16Gbit | True | REACH Unknown | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | 0℃~+95℃ | SDRAM - DDR4 | 78mA;1.14V~1.26V | 1.6GHz | 96-FBGA (10x13) | DDR4 SDRAM | 1G x 16 | Parallel | 15ns | Auto self-refresh;Auto precharge function;Write leveling function;Data mask function;Dynamic on-chip termination;CRC function | 15mA | 19 ns | ||||||||||||||||||||||||||||||||
 | MT41K128M16JT-125 XIT:K | micron | NoyanElectronic | SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 13.75 ns 96-FBGA (8x14) |
Qty in reel: 2000pcs/reel | 96-TFBGA | FBGA-96 | 2Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -40℃~+95℃ | SDRAM - DDR3L | 46mA;1.283V~1.45V | 800MHz | 96-FBGA (8x14) | DDR3L SDRAM | 128M x 16 | Parallel | Auto self-refresh;Auto precharge function;Asynchronous reset function;Data mask function;Dynamic on-chip termination;ZQ calibration function;Write leveling function | 12mA | 13.75 ns | |||||||||||||||||||||||||||||||
 | MT46H64M16LFBF-5 IT:B TR | micron | SDRAM - Mobile LPDDR Memory IC 1Gbit Parallel 200 MHz 5 ns 60-VFBGA (8x9) | 60-VFBGA | VFBGA-60(8x9) | 1Gbit | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -40℃~+85℃ | SDRAM - Mobile LPDDR | 135mA;1.7V~1.95V | 200MHz | 60-VFBGA (8x9) | LPDDR SDRAM | 64M x 16 | Parallel | 15ns | Auto self-refresh;Built-in temperature sensor;Auto precharge function;Data mask function | 5 ns | ||||||||||||||||||||||||||||||||||
 | MTFC128GASAONS-IT | micron | FLASH - NAND Memory IC 1Tbit UFS2.1 52 MHz 153-TFBGA (11.5x13) | 153-TFBGA | TFBGA-153 | 1Tbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+95℃ | FLASH - NAND | 2.7V ~ 3.6V | 52 MHz | 153-TFBGA (11.5x13) | FLASH | 128G x 8 | UFS2.1 | Software/hardware write protection;Power-on write protection;Permanent write protection;Replay-protected memory block | |||||||||||||||||||||||||||||||||||
 | MT48LC16M16A2P-6A:G | micron | NoyanElectronic | SDRAM Memory IC 256Mbit Parallel 167 MHz 5.4 ns 54-TSOP II |
Qty in reel: 2000pcs/reel | 54-TSOP (0.400", 10.16mm Width) | TSOP-54-400mil | 256Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0024 | Volatile | Surface Mount | 0℃~+70℃ | SDRAM | 3V~3.6V;100mA | 167MHz | 54-TSOP II | DRAM | 16M x 16 | Parallel | 12ns | High-speed clock synchronization;Auto precharge;Automatic column address generation;Auto refresh | 2.5mA | 5.4 ns | ||||||||||||||||||||||||||||||
 | MT29F4G08ABBFAH4-IT:F | micron | NoyanElectronic | FLASH - NAND (SLC) Memory IC 4Gbit Parallel 63-VFBGA (9x11) |
Qty in reel: 2000pcs/reel | 63-VFBGA | VFBGA-63(9x11) | 4Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NAND (SLC) | 1.7V~1.95V | 63-VFBGA (9x11) | FLASH | 512M x 8 | Parallel | Read buffer function;Copy back write function;Hardware reset function;Hardware write protection function;ECC error correction function;OTP region write protection and lock function | Parallel | 10 years | 100,000 cycles | 200us | 2ms | 15uA | ||||||||||||||||||||||||||||
 | MT53E512M32D1ZW-046 AAT:B | micron | NoyanElectronic | SDRAM - Mobile LPDDR4X Memory IC 16Gbit Parallel 2.133 GHz 3.5 ns 200-TFBGA (10x14.5) |
Qty in reel: 136pcs/reel | 200-TFBGA | 200-TFBGA(10x14.5) | 16Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -40℃~+105℃ | SDRAM - Mobile LPDDR4X | 1.06V~1.17V;40mA | 2.133GHz | 200-TFBGA (10x14.5) | LPDDR4X SDRAM | 512M x 32 | Parallel | 18ns | Auto self-refresh;Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function | 1mA | 3.5 ns | Automotive | AEC-Q100 | ||||||||||||||||||||||||||||
 | MT48LC4M32B2B5-6A AAT:L TR | micron | SDRAM Memory IC 128Mbit Parallel 167 MHz 5.4 ns 90-VFBGA (8x13) | 90-VFBGA | 90-VFBGA (8x13) | 128Mbit | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0002 | Volatile | Surface Mount | -40℃~+105℃ | SDRAM | 3V~3.6V;- | 167MHz | 90-VFBGA (8x13) | DRAM | 4M x 32 | Parallel | 12ns | High-speed clock synchronization;Auto precharge;Automatic column address generation;Auto refresh | 5.4 ns | Automotive | AEC-Q100 | ||||||||||||||||||||||||||||||||
 | MT40A2G8JC-062E IT:E | micron | SDRAM - DDR4 Memory IC 16Gbit Parallel 1.6 GHz 19 ns 78-FBGA (9x11) | 78-TFBGA | TFBGA-78 | 16Gbit | False | REACH Unaffected | ROHS3 Compliant | 3A991B1A | 8542.32.0071 | Volatile | Surface Mount | -40℃~+95℃ | SDRAM - DDR4 | 1.14V~1.26V | 1.6GHz | 78-FBGA (9x11) | DDR4 SDRAM | 2G x 8 | Parallel | 15ns | Auto self-refresh;Write leveling function;Dynamic on-chip termination;CRC function;Data mask function;Auto precharge function | 19 ns |
