micron
Results: 206
| Image | Part # | Mfr. | Supplier | Description | DC | Availability | Pricing | Qty. | Package / Case | Packaging | Memory Size | Tariff Active | ReachStatus | RohsStatus | MoistureSensitivityLevel | ExportControlClassNumber | HtsusCode | Memory Type | Transfer Rate (Mb/s, MT/s, MHz) | Mounting Type | Operating Temperature | Technology | Voltage - Supply | Clock Frequency | Supplier Device Package | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page | type | Form Factor | Speed - Read | Speed - Write | Features | Refresh Current | Access Time | interface | Data Retention - TDR (Year) | Program / Erase Cycles | Page Programming Time (Tpp) | Block Erase Time(tBE) | Standby Supply Current | Write Cycle Time(tWC) | grade | Qualification | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | MT42L16M32D1HE-18 AAT:E | micron | NoyanElectronic | SDRAM - Mobile LPDDR2 Memory IC 512Mbit Parallel 533 MHz 134-VFBGA (10x11.5) | 10 in stock |
Qty in reel: 1520pcs/reel | 134-VFBGA | FBGA-134(10x11.5) | 512Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0028 | Volatile | Surface Mount | -40°C ~ 105°C (TC) | SDRAM - Mobile LPDDR2 | 1.14V ~ 1.3V | 533 MHz | 134-VFBGA (10x11.5) | DRAM | 16M x 32 | Parallel | 15ns | Automotive | AEC-Q100 | ||||||||||||||||||||||||||||||
 | MT29F8G08ABBCAH4-IT:C TR | micron | NoyanElectronic | FLASH - NAND (SLC) Memory IC 8Gbit Parallel 25 ns 63-VFBGA (9x11) | 1 in stock |
Qty in reel: 1000pcs/reel | 63-VFBGA | VFBGA-63(9x11) | 8Gbit | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NAND (SLC) | 2.7V~3.6V | 63-VFBGA (9x11) | FLASH | 1G x 8 | Parallel | 30ns | Read buffer function;Copy back write function;Software reset function;Hardware write protection function | 25 ns | 100,000 cycles | |||||||||||||||||||||||||||||||
 | M29F800FT55N3E2 | micron | NoyanElectronic | FLASH - NOR Memory IC 8Mbit Parallel 55 ns 48-TSOP I | 5 in stock |
Qty in reel: 96pcs/reel | 48-TFSOP (0.724", 18.40mm Width) | TFSOP-48 | 8Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+125℃ | FLASH - NOR | 4.5V~5.5V | 48-TSOP I | FLASH | 1M x 8, 512K x 16 | Parallel | 55ns | Power-on reset;Hardware write protection | 55 ns | Parallel | 20 Years | 100,000 cycles | 800ms@(64KB) | 60uA | Automotive | AEC-Q100 | ||||||||||||||||||||||||
 | MT41K256M8DA-125:K | micron | NoyanElectronic | SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 13.75 ns 78-FBGA (8x10.5) | 13 in stock |
Qty in reel: 240pcs/reel | 78-TFBGA | FBGA-78 | 2Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | 0℃~+95℃ | SDRAM - DDR3L | 39mA;1.283V~1.45V | 800MHz | 78-FBGA (8x10.5) | DDR3L SDRAM | 256M x 8 | Parallel | Auto self-refresh;Auto precharge function;Asynchronous reset function;Data mask function;Dynamic on-chip termination;ZQ calibration function;Write leveling function | 12mA | 13.75 ns | ||||||||||||||||||||||||||||||
 | MT47H128M16RT-25E IT:C | micron | NoyanElectronic | SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 84-FBGA (9x12.5) | 25 in stock |
Qty in reel: 1000pcs/reel | 84-TFBGA | FBGA-84 | 2Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -40℃~+95℃ | SDRAM - DDR2 | 1.7V~1.9V;80mA | 400MHz | 84-FBGA (9x12.5) | DDR2 SDRAM | 128M x 16 | Parallel | 15ns | Auto precharge function;Data mask function;Dynamic on-chip termination | 3mA | 400 ps | |||||||||||||||||||||||||||||
 | MT40A256M16LY-062E IT:F | micron | NoyanElectronic | SDRAM - DDR4 Memory IC 4Gbit Parallel 1.6 GHz 13.75 ns 96-FBGA (7.5x13.5) | 3 in stock |
Qty in reel: 2000pcs/reel | 96-TFBGA | FBGA-96 | 4Gbit | False | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -40℃~+95℃ | SDRAM - DDR4 | 1.14V~1.26V;54mA | 1.6GHz | 96-FBGA (7.5x13.5) | DDR4 SDRAM | 256M x 16 | Parallel | Auto self-refresh;Auto precharge function;Write leveling function;CRC function;Data mask function;Dynamic on-chip termination;ZQ calibration function | 8.6mA | 13.75 ns | ||||||||||||||||||||||||||||||
 | MT41K64M16TW-107 IT:J | micron | NoyanElectronic | SDRAM - DDR3L Memory IC 1Gbit Parallel 933 MHz 20 ns 96-FBGA (8x14) | 18 in stock |
Qty in reel: 2000pcs/reel | 96-TFBGA | FBGA-96 | 1Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0032 | Volatile | Surface Mount | -40℃~+95℃ | SDRAM - DDR3L | 1.283V~1.45V;46mA | 933MHz | 96-FBGA (8x14) | DDR3L SDRAM | 64M x 16 | Parallel | Auto self-refresh;Auto precharge function;Write leveling function;Dynamic on-chip termination;Asynchronous reset function;Data mask function;ZQ calibration function | 12mA | 20 ns | ||||||||||||||||||||||||||||||
 | MT29F2G16ABAEAWP-AIT:E | micron | NoyanElectronic | FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP I | 46 in stock |
Qty in reel: 96pcs/reel | 48-TFSOP (0.724", 18.40mm Width) | TSOPI-48 | 2Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NAND | 2.7V~3.6V | 48-TSOP I | FLASH | 128M x 16 | Parallel | Read buffer function;Copy back write function;Hardware reset function;Hardware write protection function;ECC error correction function;OTP region write protection and lock function | Parallel | 10 years | 100,000 cycles | 220us | 700us | ||||||||||||||||||||||||||||
 | MT41K256M16TW-107 XIT:P | micron | NoyanElectronic | SDRAM - DDR3L Memory IC 4Gbit Parallel 933 MHz 20 ns 96-FBGA (8x14) | 1 in stock |
Qty in reel: 2000pcs/reel | 96-TFBGA | FBGA-96(8x14) | 4Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -40℃~+95℃ | SDRAM - DDR3L | 1.283V~1.45V;- | 1.866GHz | 96-FBGA (8x14) | DDR3L SDRAM | 256M x 16 | Parallel | Auto self-refresh;Write leveling function;Dynamic on-chip termination | 20 ns | |||||||||||||||||||||||||||||||
 | MT25QU128ABA1EW7-0SIT | micron | NoyanElectronic | FLASH - NOR Memory IC 128Mbit SPI - Quad I/O 133 MHz 8-WPDFN (6x5)(MLP8) | 44 in stock |
Qty in reel: 4000pcs/reel | 8-WDFN Exposed Pad | W-PDFN-8-EP(5x6) | 128Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NOR | 1.7V~2V | 133MHz | 8-WPDFN (6x5)(MLP8) | FLASH | 16M x 8 | SPI - Quad I/O | 8ms, 2.8ms | Write enable latch;Hardware write protection;Software write protection;Power-on reset | SPI | 20 Years | 100,000 cycles | 120us | 15uA | ||||||||||||||||||||||||||
 | MT48H32M16LFB4-6 IT:C | micron | NoyanElectronic | SDRAM - Mobile LPSDR Memory IC 512Mbit Parallel 166 MHz 5 ns 54-VFBGA (8x8) | 58 in stock |
Qty in reel: 2000pcs/reel | 54-VFBGA | VFBGA-54(8x8) | 512Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0028 | Volatile | Surface Mount | -40℃~+85℃ | SDRAM - Mobile LPSDR | 1.7V~1.95V;90mA | 166MHz | 54-VFBGA (8x8) | DRAM | 32M x 16 | Parallel | 15ns | High-speed clock synchronization;Auto precharge;Automatic column address generation;Auto refresh | 5 ns | ||||||||||||||||||||||||||||||
 | MT25QU256ABA1EW9-0SIT | micron | NoyanElectronic | FLASH - NOR Memory IC 256Mbit SPI - Quad I/O 133 MHz 8-WPDFN (8x6) (MLP8) | 922 in stock |
Qty in reel: 4000pcs/reel | 8-WDFN Exposed Pad | WPDFN-8-EP(6x8) | 256Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NOR | 1.7V~2V | 133MHz | 8-WPDFN (8x6) (MLP8) | FLASH | 32M x 8 | SPI - Quad I/O | 8ms, 2.8ms | Write enable latch;Hardware write protection;Software write protection;Absolute write protection | SPI | 20 Years | 100,000 cycles | 50uA | |||||||||||||||||||||||||||
 | MT41K256M8DA-125 IT:K | micron | NoyanElectronic | SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 13.75 ns 78-FBGA (8x10.5) | 38 in stock |
Qty in reel: 2000pcs/reel | 78-TFBGA | FBGA-78(8x10.5) | 2Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -40℃~+95℃ | SDRAM - DDR3L | 1.283V~1.45V;39mA | 800MHz | 78-FBGA (8x10.5) | DDR3L SDRAM | 256M x 8 | Parallel | Auto self-refresh;Auto precharge function;Asynchronous reset function;Data mask function;Dynamic on-chip termination;ZQ calibration function;Write leveling function | 12mA | 13.75 ns | ||||||||||||||||||||||||||||||
 | MT40A512M16LY-062E IT:E | micron | NoyanElectronic | SDRAM - DDR4 Memory IC 8Gbit Parallel 1.6 GHz 96-FBGA (7.5x13.5) | 87 in stock |
Qty in reel: 1080pcs/reel | 96-TFBGA | FBGA-96 | 8Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -40℃~+95℃ | SDRAM - DDR4 | 1.14V~1.26V;56mA | 1.6GHz | 96-FBGA (7.5x13.5) | DDR4 SDRAM | 512M x 16 | Parallel | Auto self-refresh;Write leveling function;Dynamic on-chip termination;CRC function;Data mask function;Auto precharge function;Asynchronous reset function;ZQ calibration function | 8.6mA | |||||||||||||||||||||||||||||||
 | MT29C2G24MAAAAKAMD-5 IT | micron | NoyanElectronic | FLASH - NAND, Mobile LPDRAM Memory IC 2Gbit (NAND), 1Gbit (LPDRAM) Parallel 200 MHz 130-VFBGA (8x9) | 10 in stock |
Qty in reel: 1pcs/reel | 130-VFBGA | VFBGA-130 | 2Gbit (NAND), 1Gbit (LPDRAM) | False | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile, Volatile | Surface Mount | -40℃~+85℃ | FLASH - NAND, Mobile LPDRAM | 1.7V~1.95V | 200 MHz | 130-VFBGA (8x9) | FLASH, RAM | 256M x 8 (NAND), 32M x 32 (LPDRAM) | Parallel | |||||||||||||||||||||||||||||||||
 | MT29F2G08ABBEAHC-IT:E | micron | NoyanElectronic | FLASH - NAND Memory IC 2Gbit Parallel 63-VFBGA (10.5x13) | 5 in stock |
Qty in reel: 1000pcs/reel | 63-VFBGA | VFBGA-63 | 2Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NAND | 1.7V~1.95V | 63-VFBGA (10.5x13) | FLASH | 256M x 8 | Parallel | Read buffer function;Copy back write function;Hardware reset function;ECC error correction function;Hardware write protection function;OTP region write protection and lock function | Parallel | 100,000 cycles | 200us | 700us | |||||||||||||||||||||||||||||
 | MT29F4G08ABADAH4:D | micron | NoyanElectronic | FLASH - NAND Memory IC 4Gbit Parallel 63-VFBGA (9x11) | 1 in stock |
Qty in reel: 1000pcs/reel | 63-VFBGA | VFBGA-63(9x11) | 4Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | 0℃~+70℃ | FLASH - NAND | 2.7V~3.6V | 63-VFBGA (9x11) | FLASH | 512M x 8 | Parallel | Read buffer function;Copy back write function;Hardware reset function;Hardware write protection function;ECC error correction function;OTP region write protection and lock function | Parallel | 10 years | 100,000 cycles | 200us | 700us | 20ns | |||||||||||||||||||||||||||
 | MT25QL128ABB1ESE-0AUT TR | micron | NoyanElectronic | FLASH - NOR Memory IC 128Mbit SPI - Quad I/O 133 MHz 8-SO | 5 in stock |
Qty in reel: 1500pcs/reel | 8-SOIC (0.209", 5.30mm Width) | SO-8 | 128Mbit | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+125℃ | FLASH - NOR | 2.7V~3.6V | 133 MHz | 8-SO | FLASH | 16M x 8 | SPI - Quad I/O | 1.8ms | SPI | 1.8ms | Automotive | AEC-Q100 | |||||||||||||||||||||||||||||
 | M29W640GB70NA6E | micron | NoyanElectronic | FLASH - NOR Memory IC 64Mbit Parallel 70 ns 48-TSOP I | 29 in stock |
Qty in reel: 96pcs/reel | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP | 64Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NOR | 2.7V~3.6V | 48-TSOP I | FLASH | 8M x 8, 4M x 16 | Parallel | 70ns | 70 ns | Parallel | |||||||||||||||||||||||||||||||
 | MT29AZ5A3CHHTB-18AIT.109 | micron | NoyanElectronic | Memory IC 4Gbit | 3 in stock |
Qty in reel: 1440pcs/reel | Bulk | 4Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | FLASH, RAM | |||||||||||||||||||||||||||||||||||||||||||
 | MT46V16M16P-5B:M | micron | NoyanElectronic | SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 66-TSOP | 6 in stock |
Qty in reel: 1000pcs/reel | 66-TSSOP (0.400", 10.16mm Width) | TSOP-66 | 256Mbit | False | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0024 | Volatile | Surface Mount | 0°C ~ 70°C (TA) | SDRAM - DDR | -;2.5V~2.7V | 200MHz | 66-TSOP | DDR SDRAM | 16M x 16 | Parallel | 15ns | Auto precharge function;Data mask function | 700 ps | ||||||||||||||||||||||||||||||
 | MT53D512M32D2DS-046 WT:D | micron | NoyanElectronic | SDRAM - Mobile LPDDR4 Memory IC 16Gbit 2.133 GHz 200-WFBGA (10x14.5) | 5 in stock |
Qty in reel: 1360pcs/reel | 200-WFBGA | WFBGA-200(10x14.5) | 16Gbit | False | REACH Unknown | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -30℃~+85℃ | SDRAM - Mobile LPDDR4 | 1.1V;2mA | 2.133GHz | 200-WFBGA (10x14.5) | LPDDR4 SDRAM | 512M x 32 | Auto self-refresh;Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function | 700uA | ||||||||||||||||||||||||||||||||
 | MT53D1024M32D4DT-046 WT:D | micron | NoyanElectronic | SDRAM - Mobile LPDDR4 Memory IC 32Gbit 2.133 GHz 200-VFBGA (10x14.5) | 102 in stock |
Qty in reel: 2000pcs/reel | 200-VFBGA | VFBGA-200(10x14.5) | 32Gbit | False | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -30℃~+85℃ | SDRAM - Mobile LPDDR4 | 1.1V;- | 2.133GHz | 200-VFBGA (10x14.5) | LPDDR4 SDRAM | 1G x 32 | Auto self-refresh;Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function | |||||||||||||||||||||||||||||||||
| MT62F2G64D8ZA-020 WT:F | micron | NoyanElectronic | Memory IC | 3 in stock |
Qty in reel: 2000pcs/reel | Bulk | False | REACH Unknown | Unknown | ||||||||||||||||||||||||||||||||||||||||||||||||
 | MT29F8G08ABACAWP-IT:C | micron | NoyanElectronic | FLASH - NAND Memory IC 8Gbit Parallel 48-TSOP I | 951 in stock |
Qty in reel: 1000pcs/reel | 48-TFSOP (0.724", 18.40mm Width) | TSOPI-48 | 8Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NAND | 2.7V~3.6V | 48-TSOP I | FLASH | 1G x 8 | Parallel | Read buffer function;Copy back write function;Software reset function;Hardware write protection function;OTP region write protection and lock function | Parallel | 60,000 Cycles | 200us | 2ms | 20ns |
