micron
Results: 206
| Image | Part # | Mfr. | Supplier | Description | DC | Availability | Pricing | Qty. | Package / Case | Packaging | Memory Size | Tariff Active | ReachStatus | RohsStatus | MoistureSensitivityLevel | ExportControlClassNumber | HtsusCode | Memory Type | Transfer Rate (Mb/s, MT/s, MHz) | Mounting Type | Operating Temperature | Technology | Voltage - Supply | Clock Frequency | Supplier Device Package | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page | type | Form Factor | Speed - Read | Speed - Write | Features | Refresh Current | Access Time | interface | Data Retention - TDR (Year) | Program / Erase Cycles | Page Programming Time (Tpp) | Block Erase Time(tBE) | Standby Supply Current | Write Cycle Time(tWC) | grade | Qualification | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | MT29F1G08ABAEAWP:E | micron | NoyanElectronic | FLASH - NAND Memory IC 1Gbit Parallel 48-TSOP I | 6 in stock |
Qty in reel: 160pcs/reel | 48-TFSOP (0.724", 18.40mm Width) | TSOPI-48 | 1Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | 0℃~+70℃ | FLASH - NAND | 2.7V~3.6V | 48-TSOP I | FLASH | 128M x 8 | Parallel | Read buffer function;Copy back write function;Hardware reset function;Hardware write protection function;OTP region write protection and lock function | Parallel | 100,000 cycles | 200us | 700us | 20ns | ||||||||||||||||||||||||||||
 | MT46H16M32LFBQ-5 AAT:C | micron | NoyanElectronic | SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 200 MHz 5 ns 90-VFBGA (8x13) | 3 in stock |
Qty in reel: 1000pcs/reel | 90-VFBGA | VFBGA-90 | 512Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -40℃~+105℃ | SDRAM - Mobile LPDDR | 1.7V~1.95V;70mA | 200MHz | 90-VFBGA (8x13) | LPDDR SDRAM | 16M x 32 | Parallel | 15ns | Auto self-refresh;Built-in temperature sensor;Auto precharge function;Data mask function | 700uA | 5 ns | |||||||||||||||||||||||||||||
 | MTFC256GASAONS-IT | micron | NoyanElectronic | 2Tbit 2.7V~3.6V 52MHz TFBGA-153 Memory (ICs) RoHS | 1 in stock |
Qty in reel: 1520pcs/reel | TFBGA-153 | 2Tbit | -40℃~+95℃ | 2.7V~3.6V | 52MHz | Read buffer function;Hardware reset function;Software write protection function;Hardware write protection function | 5 Years | |||||||||||||||||||||||||||||||||||||||||||||
 | MT40A4G4NEA-062E-R | micron | NoyanElectronic | 16Gbit 1.14V~1.26V 1.6GHz DDR4 SDRAM FBGA-78 Memory (ICs) RoHS | 4 in stock |
Qty in reel: 1260pcs/reel | FBGA-78 | 16Gbit | 0℃~+95℃ | 1.14V~1.26V;103mA | 1.6GHz | DDR4 SDRAM | Auto self-refresh | 30mA | ||||||||||||||||||||||||||||||||||||||||||||
 | MT47H32M16NF-25E AAT:H | micron | NoyanElectronic | SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 84-FBGA (8x12.5) | 5 in stock |
Qty in reel: 2000pcs/reel | 84-TFBGA | FBGA-84 | 512Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0028 | Volatile | Surface Mount | -40℃~+105℃ | SDRAM - DDR2 | 1.7V~1.9V;- | 400MHz | 84-FBGA (8x12.5) | DDR2 SDRAM | 32M x 16 | Parallel | 15ns | Auto precharge function;Data mask function;Dynamic on-chip termination | 2mA | 400 ps | Automotive | AEC-Q100 | |||||||||||||||||||||||||||
 | MT41K128M16JT-125 AUT:K | micron | NoyanElectronic | SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 13.75 ns 96-FBGA (8x14) | 1 in stock |
Qty in reel: 2000pcs/reel | 96-TFBGA | FBGA-96 | 2Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -40℃~+125℃ | SDRAM - DDR3L | 46mA;1.283V~1.45V | 800MHz | 96-FBGA (8x14) | DDR3L SDRAM | 128M x 16 | Parallel | Auto self-refresh;Auto precharge function;Asynchronous reset function;Output enable;Dynamic on-chip termination;ZQ calibration function;Write leveling function | 12mA | 13.75 ns | Automotive | AEC-Q100 | ||||||||||||||||||||||||||||
 | MT46H64M32LFBQ-48 IT:C | micron | NoyanElectronic | SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 208 MHz 5 ns 90-VFBGA (8x13) | 2 in stock |
Qty in reel: 1000pcs/reel | 90-VFBGA | VFBGA-90 | 2Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -40℃~+85℃ | SDRAM - Mobile LPDDR | 100mA;1.7V~1.95V | 208MHz | 90-VFBGA (8x13) | LPDDR SDRAM | 64M x 32 | Parallel | 14.4ns | Auto self-refresh;Built-in temperature sensor;Auto precharge function;Data mask function | 5 ns | ||||||||||||||||||||||||||||||
 | MT29F2G01ABAGD12-AAT:G | micron | NoyanElectronic | FLASH - NAND Memory IC 2Gbit SPI 83 MHz 24-T-PBGA (6x8) | 3 in stock |
Qty in reel: 1122pcs/reel | 24-TBGA | TPBGA-24(6x8) | 2Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+105℃ | FLASH - NAND | 2.7V~3.6V | 83MHz | 24-T-PBGA (6x8) | FLASH | 2G x 1 | SPI | SPI | ||||||||||||||||||||||||||||||||
 | MT35XU512ABA1G12-0AAT | micron | NoyanElectronic | FLASH - NOR Memory IC 512Mbit Xccela Bus 200 MHz 24-T-PBGA (6x8) | 2 in stock |
Qty in reel: 1122pcs/reel | 24-TBGA | TPBGA-24(6x8) | 512Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+105℃ | FLASH - NOR | 1.7V~2V | 200MHz | 24-T-PBGA (6x8) | FLASH | 64M x 8 | Xccela Bus | Software write protection;Hardware write protection;Absolute write protection | SPI | 20 Years | 100,000 cycles | |||||||||||||||||||||||||||||
 | MT35XU512ABA1G12-0AUT | micron | NoyanElectronic | FLASH - NOR Memory IC 512Mbit Xccela Bus 200 MHz 24-T-PBGA (6x8) | 1 in stock |
Qty in reel: 1122pcs/reel | 24-TBGA | TPBGA-24(6x8) | 512Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+125℃ | FLASH - NOR | 1.7V~2V | 200MHz | 24-T-PBGA (6x8) | FLASH | 64M x 8 | Xccela Bus | Software write protection;Hardware write protection;Absolute write protection | SPI | 20 Years | 100,000 cycles | |||||||||||||||||||||||||||||
 | MT29F32G08ABCABH1-10ITZ:A | micron | NoyanElectronic | FLASH - NAND Memory IC 32Gbit Parallel 100 MHz 100-VBGA (12x18) | 5 in stock |
Qty in reel: 1120pcs/reel | 100-VBGA | VBGA-100(12x18) | 32Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NAND | 2.7V~3.6V | 100MHz | 100-VBGA (12x18) | FLASH | 4G x 8 | Parallel | Read buffer function;Copy back write function;Hardware reset function;Software reset function;Hardware write protection function;OTP region write protection and lock function | Parallel | 60,000 Cycles | ||||||||||||||||||||||||||||||
 | MT29F2G16ABAEAWP-AIT:E TR | micron | NoyanElectronic | FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP I | 4 in stock |
Qty in reel: 1000pcs/reel | 48-TFSOP (0.724", 18.40mm Width) | TFSOP-48-18.4mm | 2Gbit | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NAND | 2.7V~3.6V | 48-TSOP I | FLASH | 128M x 16 | Parallel | Read buffer function;Copy back write function;Hardware reset function;Hardware write protection function;ECC error correction function;OTP region write protection and lock function | Parallel | 10 years | 100,000 cycles | 200us | 700us | 20ns | ||||||||||||||||||||||||||||
 | MTFC32GAKAEEF-AIT | micron | NoyanElectronic | FLASH - NAND Memory IC 256Gbit MMC 169-TFBGA (14x18) | 5 in stock |
Qty in reel: 1000pcs/reel | 169-TFBGA | TFBGA-169(14x18) | 256Gbit | False | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | OBSOLETE | 8542.32.0071 | Non-Volatile | Surface Mount | -40°C ~ 85°C (TA) | FLASH - NAND | 2.7V ~ 3.6V | 169-TFBGA (14x18) | FLASH | 32G x 8 | MMC | ||||||||||||||||||||||||||||||||||
 | MT29F2G08ABAEAWP-AITX:E | micron | NoyanElectronic | FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP I | 1 in stock |
Qty in reel: 960pcs/reel | 48-TFSOP (0.724", 18.40mm Width) | TFSOP-48-18.4mm | 2Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NAND | 2.7V~3.6V | 48-TSOP I | FLASH | 256M x 8 | Parallel | Read buffer function;Copy back write function;Hardware reset function;ECC error correction function;Hardware write protection function;OTP region write protection and lock function | Parallel | 100,000 cycles | 200us | 700us | 10uA | ||||||||||||||||||||||||||||
 | MT29F1G08ABAEAH4-ITX:E | micron | NoyanElectronic | FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (9x11) | 2 in stock |
Qty in reel: 1000pcs/reel | 63-VFBGA | VFBGA-63(9x11) | 1Gbit | False | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NAND | 2.7V~3.6V | 63-VFBGA (9x11) | FLASH | 128M x 8 | Parallel | Parallel | |||||||||||||||||||||||||||||||||
 | MT29F2G08ABAEAWP-AATX:E TR | micron | NoyanElectronic | FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP I | 2 in stock |
Qty in reel: 1000pcs/reel | 48-TFSOP (0.724", 18.40mm Width) | TFSOP-48-18.4mm | 2Gbit | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+105℃ | FLASH - NAND | 2.7V~3.6V | 48-TSOP I | FLASH | 256M x 8 | Parallel | Read buffer function;Copy back write function;Hardware reset function;ECC error correction function;Hardware write protection function;OTP region write protection and lock function | Parallel | 10 years | 100,000 cycles | 200us | 700us | 100uA | ||||||||||||||||||||||||||||
 | PC28F128P33BF60A | micron | NoyanElectronic | FLASH - NOR Memory IC 128Mbit Parallel 52 MHz 60 ns 64-EasyBGA (10x13) | 1 in stock |
Qty in reel: 1pcs/reel | 64-TBGA | EASYBGA-64(8x10) | 128Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NOR | 2.3V~3.6V | 52MHz | 64-EasyBGA (10x13) | FLASH | 8M x 16 | Parallel | 60ns | 60 ns | Parallel | 100,000 cycles | 50uA | ||||||||||||||||||||||||||||
 | MT25QU01GBBB1EW9-0SIT | micron | NoyanElectronic | FLASH - NOR Memory IC 1Gbit SPI - Quad I/O 133 MHz 8-WPDFN (8x6) (MLP8) | 4 in stock |
Qty in reel: 192pcs/reel | 8-WDFN Exposed Pad | WPDFN-8(6x8) | 1Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40℃~+85℃ | FLASH - NOR | 1.7V~2V | 133MHz | 8-WPDFN (8x6) (MLP8) | FLASH | 128M x 8 | SPI - Quad I/O | 8ms, 2.8ms | Write enable latch;Hardware write protection;Software write protection | SPI | 20 Years | 100,000 cycles | 1.8ms | |||||||||||||||||||||||||||
 | MT41K512M16VRP-107 AAT:P TR | micron | NoyanElectronic | SDRAM - DDR3L Memory IC 8Gbit Parallel 933 MHz 20 ns 96-FBGA (8x14) | 1 in stock |
Qty in reel: 2000pcs/reel | 96-TFBGA | FBGA-96(8x14) | 8Gbit | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -40℃~+105℃ | SDRAM - DDR3L | 1.283V~1.45V;58mA | 933MHz | 96-FBGA (8x14) | DDR3L SDRAM | 512M x 16 | Parallel | 15ns | Auto self-refresh;Auto precharge function;Asynchronous reset function;Data mask function;Dynamic on-chip termination;Write leveling function | 30mA | 20 ns | Automotive | AEC-Q100 | ||||||||||||||||||||||||||||
 | MT46V64M8CY-5B:J | micron | NoyanElectronic | SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-FBGA (8x12.5) | 5 in stock |
Qty in reel: 1368pcs/reel | 60-TFBGA | 60-FBGA (8x12.5) | 512Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | 0℃~+70℃ | SDRAM - DDR | 155mA;2.5V~2.7V | 200MHz | 60-FBGA (8x12.5) | DDR SDRAM | 64M x 8 | Parallel | 15ns | Auto precharge function;Data mask function | 5mA | 700 ps | |||||||||||||||||||||||||||||
 | MT46V64M8P-5B:J | micron | NoyanElectronic | SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 66-TSOP | 5 in stock |
Qty in reel: 1080pcs/reel | 66-TSSOP (0.400", 10.16mm Width) | TSOP-66 | 512Mbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0028 | Volatile | Surface Mount | 0℃~+70℃ | SDRAM - DDR | 2.5V~2.7V;75mA | 200MHz | 66-TSOP | DRAM | 64M x 8 | Parallel | 15ns | High-speed clock synchronization;Auto precharge;Auto refresh | 5mA | 700 ps | |||||||||||||||||||||||||||||
 | MT53E256M32D1KS-046 WT:L | micron | NoyanElectronic | SDRAM - Mobile LPDDR4 Memory IC 8Gbit Parallel 2.133 GHz 200-VFBGA (10x14.5) | 1 in stock |
Qty in reel: 1360pcs/reel | 200-VFBGA | BGA-200(14.5x10) | 8Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -30℃~+85℃ | SDRAM - Mobile LPDDR4 | 1.06V~1.17V;- | 2.133GHz | 200-VFBGA (10x14.5) | LPDDR4 SDRAM | 256M x 32 | Parallel | Auto self-refresh;Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function;Asynchronous reset function;Data mask function | ||||||||||||||||||||||||||||||||
 | MT53E256M32D1KS-046 AAT:L | micron | NoyanElectronic | SDRAM - Mobile LPDDR4 Memory IC 8Gbit Parallel 2.133 GHz 200-VFBGA (10x14.5) | 5 in stock |
Qty in reel: 136pcs/reel | 200-VFBGA | BGA-200(14.5x10) | 8Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8542.32.0036 | Volatile | Surface Mount | -40℃~+105℃ | SDRAM - Mobile LPDDR4 | 1.06V~1.17V;- | 2.133GHz | 200-VFBGA (10x14.5) | LPDDR4 SDRAM | 256M x 32 | Parallel | Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function | Automotive | AEC-Q100 | ||||||||||||||||||||||||||||||
 | MT29GZ5A5BPGGA-046IT.87J | micron | NoyanElectronic | FLASH - NAND (SLC), DRAM - LPDDR4 Memory IC 4Gbit (NAND), 4Gbit (LPDDR4) ONFI 2.133 GHz 25 ns 149-WFBGA (8x9.5) | 3 in stock |
Qty in reel: 1pcs/reel | 149-WFBGA | BGA-149(8x9.5) | 4Gbit (NAND), 4Gbit (LPDDR4) | False | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | Non-Volatile, Volatile | Surface Mount | -40°C ~ 85°C (TA) | FLASH - NAND (SLC), DRAM - LPDDR4 | 1.06V ~ 1.17V, 1.7V ~ 1.95V | 2.133 GHz | 149-WFBGA (8x9.5) | FLASH, RAM | 512M x 8 (NAND), 128M x 32 (LPDDR4) | ONFI | 30ns | 25 ns | |||||||||||||||||||||||||||||||||
 | MT29F4G01ABAFD12-AAT:F | micron | NoyanElectronic | FLASH - NAND (SLC) Memory IC 4Gbit SPI 24-T-PBGA (6x8) | 3 in stock |
Qty in reel: 187pcs/reel | 24-TBGA | Tray | 4Gbit | True | REACH Unaffected | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | Non-Volatile | Surface Mount | -40°C ~ 105°C (TA) | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 24-T-PBGA (6x8) | FLASH | 4G x 1 | SPI | Automotive | AEC-Q100 |
