مدار مجتمع (آی سی) آی‌سی مدیریت توان (پی‌ام‌آی‌سی) سوییچ توزیع توان و درایور بار

Product Attributes

Introduction

The single-output eGaN® gate driver development module integrates a high-speed gate drive circuit constructed entirely from eGaN® switching elements, +5 V DC input V_BIAS undervoltage monitoring and reporting functionality, and an internal output load gate bias overvoltage clamp protection circuit — all housed in an innovative, space-saving 9-pin SMT molded epoxy package. This module provides an excellent engineering design development platform for transitioning to the FBS-GAM01P-R-PSE flight version.

Features

• Compatible with all EPC Space discrete eGaN® FBG and FDA series HEMTs
• Single-channel independent eGaN® gate driver
• Capable of driving 5000 pF+ loads
• Logic-compatible input
• Gate bias UVLO protection, detection, and reporting
• Bidirectional shutdown input / power-good output
• Internal V_BIAS overvoltage protection
• Fast transition time: 30 ns typical
• High-speed capability: 3.0 MHz+
• All-eGaN® switching elements
• Integrated driver bypass capacitors
• No bipolar technology
• Robust overmolded SMT package "post" I/O pads
• Compact dimensions: 0.500 × 0.375 × 0.135 inches
• Operating temperature range: -40°C to +85°C
• Commercial grade screening

Applications

• Development platform
• High-speed DC-DC conversion
• Synchronous rectification
• Power switching/actuators
• Multiphase motor drivers