مدار مجتمع (آی سی) آی‌سی مدیریت توان (پی‌ام‌آی‌سی) درایور و کنترلر موتور

Product Attributes

Introduction

This product adopts an H-bridge circuit architecture with high-reliability power transistor technology, making it especially suitable for driving inductive loads such as coils and motors. The circuit integrates N-channel and P-channel power MOSFETs internally, with an operating voltage range of 2V to 7V. At 27℃ with VDD = 5V, the maximum continuous output current reaches 0.6A and the maximum peak output current reaches 1A.

This single-channel device is a power component with inherent on-resistance. Circuit heating is closely related to load current, power MOSFET on-resistance, and ambient temperature. The circuit incorporates an on-chip temperature detection circuit that monitors internal chip heating in real time. When the internal chip temperature exceeds the set threshold (typical value 150℃), a power MOSFET shutdown signal is generated to cut off the load current, preventing continuous temperature rise caused by abnormal usage that could lead to serious safety hazards such as smoking or ignition of the plastic package. The built-in thermal hysteresis circuit ensures that control of the power MOSFETs is only permitted to resume after the circuit has returned to a safe temperature.

Features

• Low standby current (less than 0.1uA)
• Low on-resistance MOSFET power switches designed with MOS process; 100mA channel on-resistance 0.7Ω, 500mA channel on-resistance 0.8Ω
• Integrated freewheeling diode — no external freewheeling diode required
• Ultra-compact SOT23-6 package, overall dimensions 2.92mm×2.8mm (including leads)
• Low input current — integrated ~53K pull-down resistor to ground; average input current 56.5uA with 3V drive signal
• Built-in thermal shutdown (TSD) with hysteresis
• ESD rating: 3KV (HBM)

Applications

• RC toy aircraft tail motor drive
• RC toy aircraft servo motor drive
• Toy DC motor drive
• Digital product motor drive