مدار مجتمع (آی سی) آی‌سی مدیریت توان (پی‌ام‌آی‌سی) درایور و کنترلر موتور

Product Attributes

Introduction

Toy motor driver powered by 2–6 AA/AAA dry-cell batteries Toy motor driver powered by 2–6 NiMH/NiCd rechargeable batteries Motor driver powered by 1–2 lithium batteries This product features an H-bridge circuit topology using high-reliability power transistor technology, making it especially suitable for driving inductive loads such as coils and motors. The circuit integrates N-channel and P-channel power MOSFETs, with an operating voltage range of 2V to 9.6V. At 27°C and VDD = 6.5V, the maximum continuous output current is 1.1A and the maximum peak output current is 1.5A. This single-channel device is a power component with inherent on-resistance; circuit heating is closely related to load current, MOSFET on-resistance, and ambient temperature. The circuit incorporates a chip-level temperature detection circuit that continuously monitors internal chip temperature. When the internal chip temperature exceeds the set threshold (typical value 150°C), a power MOSFET shutdown signal is generated to cut off the load current, preventing continuous temperature rise caused by abnormal use that could lead to serious safety hazards such as smoking or ignition of the plastic package. The built-in thermal hysteresis circuit ensures that control of the power MOSFETs is only permitted after the circuit has returned to a safe temperature.

Features

• Low standby current (< 0.1uA)
• Low on-resistance MOSFET power switch designed with MOS process; 800mA channel on-resistance 0.48Ω, 200mA channel on-resistance 0.44Ω
• VCC can be left floating under specific conditions — minimum input signal high-level voltage greater than 2.4V
• Low input current with integrated ~15K pull-down resistor to ground; VCC connected: avg. 195uA input current with 3V drive signal; VCC floating: avg. 330uA input current with 3V drive signal
• Built-in thermal shutdown (TSD) with hysteresis
• ESD rating: 3KV (HBM)

Applications

• Electronic lock