مدار مجتمع (آی سی) آی‌سی مدیریت توان (پی‌ام‌آی‌سی) درایور گیت

EPC UP1966E

Manufacturer	EPC
Mfr. Part Number	UP1966E
Electland Part Code	802919
Electland Part Number	NYE_UP1966E
Category	Gate Drivers
Description	Half-Bridge Gate Driver IC Non-Inverting 12-WLCSP-B (1.6x1.6)

Product Attributes

Category	Integrated Circuits (ICs) Power Management (PMIC) Gate Drivers
Driven Configuration	Half-Bridge
Channel Type	Independent
Number of Drivers	2
Gate Type	GaN FET
Voltage - Supply	4.5V~5.5V
Logic Voltage - VIL, VIH	0.5V, 2.3V
Current - Peak Output (Source, Sink)	7.1A, 12.5A
Input Type	Non-Inverting
High Side Voltage - Max (Bootstrap)	85 V
Rise / Fall Time (Typ)	8ns, 4ns
Operating Temperature	-40°C ~ 125°C (TJ)
Mounting Type	Surface Mount
Package / Case	12-UFBGA, WLCSP
Supplier Device Package	12-WLCSP-B (1.6x1.6)
Features	Dead-time control;Built-in bootstrap diode
Quiescent Current	120uA
High level Delay Time	20ns
Low level Delay Time	20ns
Rise Time	8ns
Fall Time	4ns
Load Type	MOSFET
Packaging	WLCSP-12-B(1.6x1.6)
ReachStatus	REACH Unaffected
RohsStatus	ROHS3 Compliant
MoistureSensitivityLevel	3 (168 Hours)
ExportControlClassNumber	EAR99
HtsusCode	8542.39.0070
Weight	0.5g

Introduction

The uP1966E is designed to drive both high- side and low- side GaN FETs in half bridge topologies. It integrates an internal bootstrap supply and UVLO. The uP1966E has split gate outputs that can operate to several MHz on both high and low side drive channels, providing the ability to adjust both turn- on and turn- off transition times independently. A clamping circuit is used on the high side drive to keep unwanted transients from damaging GaN device gates. The uP1966E has two PWM inputs that independently control high side and low side drive signals. The uP1966E is available in a 12- pin WLCSP package that minimizes package inductance for improved high- speed operation. The uP1966E comes in a 1.6mm WLCSP1.6x1.6- 12B package.