مدار مجتمع (آی سی) آی‌سی مدیریت توان (پی‌ام‌آی‌سی) درایور گیت

Product Attributes

Introduction

The EPC23103 ePowerTM Stage IC integrates a half - bridge gate driver with internal high side and low side FETs. Integration is implemented using EPC’s proprietary GaN IC technology. The monolithic chip integrates input logic interface, level shifting, bootstrap charging and gate drive buffer circuits controlling high side and low side eGaN output FETs configured as a half - bridge power stage. Robust level shifters from low side to high side channels are designed to operate correctly with soft and hard switching conditions even at large negative clamped voltage and to avoid false trigger from fast dv/dt transients including those driven by external sources or other phases. Internal circuits integrate the functions of charging and disabling of the logic and bootstrap power supplies. Protection features are added to protect the output FETs from unwanted turn - on at low or even complete loss of supply voltages. The single chip is mounted inside a 3.5×5 mm Quad Flat No - lead (QFN) package using a flip chip on leadframe technique. This packaging structure allows very low parasitic inductance from the power terminals to the underlying PCB solder pads. The exposed EPC23103 QFN pads are designed to have at least 0.6 mm spacing between high and low voltage pins to meet IPC voltage creepage rule for 100 V. Another enhancement exposes the backside of the Gan IC die on the top side of the package while completely encapsulating the rest of the GaN die.

Features

• Integrated high side and low side eGaN FET with internal gate driver and level shifter
• 5 V external bias supply
• 3.3 V or 5 V CMOS input logic levels
• Independent high side and low side control inputs
• Logic lockout commands both FETs off when inputs are both high at same time
• External resistors to tune SW switching times and over - voltage spikes above rail and below ground
• Robust level shifter operating for hard and soft switching conditions
• False trigger immunity from fast switching transients
• Synchronous charging for high side bootstrap supply
• Disable input engages low quiescent current mode from VDRV supply
• Power on reset for low side VDD supply
• Power on reset for high side VBoot supply
• Active gate pull - down for HS FET and LS FET with loss of VDRV supply
• Thermally enhanced QFN package with exposed top for low thermal resistance from junction to top - side heatsink

Applications

• Buck, Boost, Buck - Boost Converters
• Half - Bridge, Full Bridge LLC Converters
• Motor Drive Inverter
• Class D Audio Amplifier