مدار مجتمع (آی سی) آی‌سی مدیریت توان (پی‌ام‌آی‌سی) درایور گیت

Product Attributes

Introduction

The ePower™ family of ICs utilizes EPC's proprietary GaN IC technology to integrate input logic interface, high-side level shifting, synchronous bootstrap charging, and gate drivers with eGaN output FETs into a monolithic IC housed in an MSL1 QFN package. The resulting power stage IC converts logic-level control signals into a high-voltage, high-current power stage — enabling simpler design, smaller footprint, easier manufacturing, and higher operating efficiency.

Features

• Integrated high-side and low-side eGaN FETs with internal gate drivers and level shifters
• 5 V external bias supply
• 3.3 V or 5 V CMOS input logic levels
• Independent high-side and low-side control inputs
• Logic interlock forces both FETs off when inputs are simultaneously high
• External resistor-adjustable SW switching time
• Robust level shifter operation for hard-switching and soft-switching conditions
• Synchronous charging of high-side bootstrap supply
• Standby function with low quiescent current mode
• Power-on reset for low-side and high-side supplies
• Guaranteed power stage high-impedance state in absence of VDRV/VBOOT supply
• Thermally enhanced QFN package with exposed top for low junction-to-top-side heatsink thermal resistance

Applications

• Buck, boost, buck-boost converters
• Half-bridge, full-bridge LLC converters
• Motor drive inverters
• Class D audio amplifiers