مدار مجتمع (آی سی) آی‌سی مدیریت توان (پی‌ام‌آی‌سی) درایور گیت

Product Attributes

Introduction

G2061Q is a family of high-voltage, high-speed power MOSFET high- and low-side driver ICs, fabricated using a high-voltage compatible process that enables monolithic integration of both high-side and low-side gate drive circuits. It features independent high-side and low-side referenced output channels. Logic inputs are compatible with CMOS or LSTTL logic output levels as low as 3.3V, and the outputs provide high-current pulse capability with shoot-through prevention dead-time logic. The floating channel can be used to drive a high-side N-channel power MOSFET, with a maximum floating supply voltage of 250V. Packaged in QFN24, it operates over a temperature range of -40°C to 125°C.

Features

• Bootstrap-operated floating high-side channel
• Maximum operating voltage +250V
• Compatible with 3.3/5V input logic
• dVs/dt immunity up to ±50V/ns
• Vs negative bias capability down to -9V
• Gate drive voltage range 8V to 20V
• High- and low-side UVLO: high-side UVLO positive threshold 7.1V, high-side UVLO negative threshold 6.9V, low-side UVLO positive threshold 7V, low-side UVLO negative threshold 6.6V
• Shoot-through prevention dead-time logic: dead time 200ns
• Propagation delay characteristics: turn-on/turn-off propagation delay Ton/Toff = 150ns/120ns, delay matching less than 50ns
• Wide temperature range -40~125℃
• Output stage source/sink current capability 1.5A/1.8A
• Ro compliant

Applications

• Motor Control
• Air Conditioner / Washing Machine
• General-Purpose Inverter
• Micro Inverter Drive