مدار مجتمع (آی سی) آی‌سی مدیریت توان (پی‌ام‌آی‌سی) درایور گیت

Product Attributes

Introduction

IR2113-MNS is a high-voltage, high-speed power MOSFET high- and low-side driver IC, integrating both high-side and low-side gate drive circuits on a single chip using a process compatible with both high and low voltages. Logic inputs are compatible with CMOS or LSTTL logic output levels down to 3.3V, and the outputs feature high-current pulse capability. The floating channel supports high-side N-channel power MOSFET driving, with a maximum floating supply offset voltage of 700V. An integrated high- and low-side shutdown logic enables on/off control under fault conditions. The device is available in a wide-body DIP-14 package with an operating temperature range of -40°C to 125°C.

Features

• Floating channel for bootstrap operation
• Maximum operating voltage up to 700V
• Compatible with 3.3V, 5V, and 15V input logic
• dVS/dt immunity up to ±50 V/nsec
• VS negative bias capability down to -9V
• Gate drive voltage range 10V~20V
• Wide temperature range -40~125°C
• Integrated undervoltage lockout (UVLO)
• Cycle-by-cycle edge-triggered shutdown logic
• In-phase input and output
• Logic and power ground offset ±5V
• Turn-on/turn-off propagation delay: Ton/Toff = 130ns/130ns, matched high- and low-side propagation delay
• Drive current capability: source/sink = 4.0A/4.0A
• High- and low-side UVLO: UVLO positive threshold 8.9V, UVLO negative threshold 8.2V
• RoHS compliant, DIP-14 package

Applications

• General-purpose inverters
• Half-bridge and full-bridge converters in AC and DC power supplies
• High-density switching power supplies for server, telecom, IT, and industrial infrastructure
• Solar inverters
• Motor drives
• UPS