مدار مجتمع (آی سی) آی‌سی مدیریت توان (پی‌ام‌آی‌سی) درایور گیت

Product Attributes

Introduction

NSG6000R is a high-voltage, high-speed power MOSFET high- and low-side gate driver IC. It features independent high-side and low-side referenced output channels, suitable for direct drive of MOSFETs within 5A. Fabricated using a high- and low-voltage compatible process, the high- and low-side gate drive circuits are integrated on a single chip. Logic input levels are compatible with CMOS or LSTTL logic output levels as low as 3.3V. The floating channel can be used to drive high-side N-channel power MOSFETs, with a maximum floating supply voltage of 600V. Housed in a SOP8 package, it operates over a temperature range of -40°C to 125°C.

Features

• Bootstrap-operated floating high-side channel
• Maximum chip voltage rating: +650V
• Compatible with 3.3V, 5V, and 15V input logic
• dVs/dt immunity up to ±50V/ns
• Vs negative bias capability down to -9V
• Integrated VCC and VBS UVLO — VCC UVLO threshold 8.7V/7.7V, VBS UVLO threshold 8.2V/7.3V
• Integrated gate resistor, suitable for MOSFETs up to 5A
• Cross-conduction prevention — dead time 540ns
• Wide temperature range: -40°C ~ 125°C
• RoHS-compliant SOP8 (S) package

Applications

• Motor Control
• Air Conditioner/Washing Machine
• General-Purpose Inverter
• Inverter Drive