نیمه‌هادی‌ گسسته دیود دیود آر‌اف

Product Attributes

Introduction

The MELF and HIPAX PIN diode series are designed for switching and attenuator applications requiring high power handling and low distortion. These diodes utilize fully passivated PIN diode chips to achieve extremely low reverse bias leakage current. The semiconductor technology employed in the MELF and HIPAX series draws on MACOM's extensive experience in PIN diode design and wafer fabrication. The resulting devices feature a thick I-region and long carrier lifetime while maintaining low series resistance and capacitance values. The MELF and HIPAX PIN diode chips are packaged in rugged ceramic housings with full surface bonding to metal leads at both anode and cathode. The symmetric thermal path yields a low-loss, low thermal resistance PIN diode. These components are available in magnetic or non-magnetic, HIPAX (axial lead) or MELF (leadless metal end cap) SMT packages suitable for MRI applications. MELF is a rectangular SMD package designed for high-volume tape-and-reel assembly. This user-friendly package design facilitates automated pick-and-place and assembly. The flat parallel surfaces are compatible with most gripper or vacuum pick-up techniques. All solderable surfaces are tin-plated, compatible with industry-standard reflow and vapor phase soldering processes. For a typical reflow profile, refer to Application Note M538. Many of MACOM's HIPAX PIN diodes are also available in die form. For availability and specifications, refer to the "Silicon PIN Die Data Sheet."

Features

• High power handling capability
• Low loss / low distortion
• Voltage ratings up to 1000V
• Passivated die for low leakage current
• Full surface die bonding for low thermal resistance (θ)
• Leadless low-inductance MELF package
• Multiple package options
• Available in die form
• Fully RoHS compliant
• Non-magnetic packaging available for MRI applications

Applications

HIPAX PIN diodes are designed for various switching and attenuator applications, covering frequency ranges from HF to UHF, with power levels exceeding 1 kW CW. Internal chips and each diode assembly undergo comprehensive testing and characterization to ensure predictable and repeatable performance.