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Product Attributes

Introduction

GaAs PIN diodes offer superior performance characteristics compared to silicon devices in many microwave semiconductor applications. These advantages stem from the inherent semiconductor properties of GaAs. Its intrinsically high carrier mobility enables low-resistance, fast-switching devices. The low carrier concentration in the I-region layer produces a punch-through bias voltage approaching zero. The wide bandgap of GaAs also ensures operation at elevated temperatures. Using low-cost TTL buffer logic, GaAs PIN diodes can achieve switching speeds in the low nanosecond range. This performance is made possible because GaAs PIN diodes exhibit high impedance under forward bias (up to 0.5V). Reverse bias is not required in many GaAs PIN diode applications. Due to low parasitic series resistance in both the on and off states, low insertion loss in switch and phase shifter circuits is achievable at frequencies up to 40 GHz.

Features

• Direct TTL signal drive capability
• RoHS compliant
• Low series resistance
• Fast switching speed
• No reverse bias required
• RoHS compliant