| Manufacturer | BOURNS |
|---|---|
| Mfr. Part Number | TISP83121DR-S |
| Electland Part Code | 389610 |
| Electland Part Number | NYE_TISP83121DR-S |
| Category | Thyristors (TSS) |
| Description | 100V Off-State 500 A Ipp TVS Thyristor 8-SOIC (0.154", 3.90mm Width) |
| Datasheet | Download |
| Category | Circuit Protection Transient Voltage Suppressors (TVS) Thyristors (TSS) |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Holding Current (Ih) | 90mA |
| Number of Elements | 1 |
| Supplier Device Package | 8-SOIC |
| Current - Peak Pulse (10/1000µs) | 150 A |
| Peak Pulse Current-Ipp (10/1000us) | 150A |
| Voltage - Off State | 100V |
| Current - Hold (Ih) | 90 mA |
| Current - Peak Pulse (8/20µs) | 500 A |
| Packaging | SOIC-8 |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.30.0080 |
| Weight | 0.1g |
The TISP83121D is a dual-gate reverse-blocking unidirectional thyristor designed for the protection of dual-voltage ringing SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. The device chip is a four-layer NPNP silicon thyristor structure which has an electrode connection to every layer. For negative overvoltage protection the TISP83121D is used in a common anode configuration with the voltage to be limited applied to the cathode (K) terminal and the negative reference potential applied to the gate 1 (G1) terminal. For positive overvoltage protection the TISP83121D is used in a common cathode configuration with the voltage to be limited applied to the anode (A) terminal and the positive reference potential applied to the gate 2 (G2) terminal. The TISP83121D is a unidirectional protector and to prevent reverse bias, requires the use of a series diode between the protected line conductor and the protector. Further, the gate reference supply voltage requires an appropriately poled series diode to prevent the supply from being shorted when the TISP83121D crowbars. Under low level power cross conditions the TISP83121D gate current will charge the gate reference supply. If the reference supply cannot absorb the charging current its potential will increase possibly to damaging levels. To avoid excessive voltage levels a clamp (zener or avalanche breakdown diode) may be added in shunt with the supply. Alternatively, a grounded collector emitter follower may be used to reduce the charging current by the transistor's DC current gain (H_FE) value. This monolithic protection device is made with an ion-implanted epitaxial-planar technology to give a consistent protection performance and be virtually transparent to the system in normal operation.
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $0.2517 | 69,890 تومان |
| 200+ | $0.0981 | 27,240 تومان |
| 500+ | $0.0948 | 26,320 تومان |
| 1000+ | $0.0929 | 25,790 تومان |