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BOURNS TISP8200HDMR-S

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BOURNS TISP8200HDMR-S

Manufacturer BOURNS
Mfr. Part Number TISP8200HDMR-S
Electland Part Code 385678
Electland Part Number NYE_TISP8200HDMR-S
Category Mixed Technology
Description Mixed Technology TVS Device 2 Circuit Surface Mount 8-SOIC

Product Attributes

Category Circuit Protection Transient Voltage Suppressors (TVS) Mixed Technology
Technology Mixed Technology
Number of Circuits 2
Applications General Purpose
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Operating Temperature -55℃~+150℃
Features Overvoltage clamping protection
Number of Channels 2
Packaging SOIC-8
Tariff Active True
ReachStatus REACH Unaffected
RohsStatus ROHS3 Compliant
MoistureSensitivityLevel 1 (Unlimited)
ExportControlClassNumber EAR99
HtsusCode 8536.30.8000
Weight 0.1g

Introduction

The TISP8200HDM/TISP8201HDM combination has been designed to protect dual polarity supply rail monolithic SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. Protection against negative overvoltages is given by the TISP8200HDM. Protection against positive overvoltages is given by the TISP8201HDM. Both parts are in 8 - SOIC (210 mil) surface mount packages.

The TISP8200HDM has an array of two buffered P - gate SCRs with a common anode connection. Each SCR cathode and gate has a separate terminal connection. The NPN buffer transistors reduce the gate supply current. In use, the cathodes of the TISP8200HDM SCRs are connected to the two conductors of the POTS line. The gates are connected to the appropriate negative voltage battery feed of the SLIC driving the line conductor pair, so that the TISP8200HDM protection voltage tracks the SLIC negative supply voltage. The anode of the TISP8200HDM is connected to the SLIC common. Negative overvoltages are initially clipped close to the SLIC negative supply by emitter follower action of the NPN buffer transistor. If sufficient clipping current flows, the SCR will regenerate and switch into a low voltage on - state condition. As the overvoltage subsides the high holding current of the SCR helps prevent d.c. latchup.

The TISP8201HDM has an array of two buffered N - gate SCRs with a common cathode connection. Each SCR anode and gate has a separate terminal connection. The PNP buffer transistors reduce the gate supply current. In use, the anodes of the TISP8201HDM SCRs are connected to the two conductors of the POTS line. The gates are connected to the appropriate positive voltage battery feed of the SLIC driving that line pair, so that the TISP8201HDM protection voltage tracks the SLIC positive supply voltage. The cathode of the TISP8201HDM is connected to the SLIC common. Positive overvoltages are initially clipped close to the SLIC positive supply by emitter follower action of the PNP buffer transistor. If sufficient clipping current flows the SCR will regenerate and switch into a low voltage on - state condition. As the overvoltage subsides the SLIC pulls the conductor voltage down to its normal negative value and this commutates the conducting SCR into a reverse biased condition.

Features

  • Wide - 20 to - 110 V Programming Range (TISP8200HDM)
  • Low ±15 mA Max. Gate Triggering Current (TISP8200HDM)
  • High - 150 mA Min. Holding Current (TISP8200HDM)
  • Wide ±20 to ±110 V Programming Range (TISP8201HDM)
  • Low - 15 mA Max. Gate Triggering Current (TISP8201HDM)
  • ±20 mA Min. Holding Current (TISP8201HDM)
  • Rated for International Surge Wave Shapes
  • UL Recognized Component

In-Stock Suppliers

NoyanElectronic
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Supplier Part Number: NYE_TISP8200HDMR-S

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QTY USD TOMAN
1+$1.1305,420 تومان
200+$0.4405122,310 تومان
500+$0.4258118,230 تومان
1000+$0.4188116,280 تومان

Qty in reel: 2000pcs/reel