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RENESAS F6123AVGI

آر اف (فرکانس رادیویی) و بی‌سیم آی سی‌ فرستنده‌گیرنده آر اف

RENESAS F6123AVGI

Manufacturer RENESAS
Mfr. Part Number F6123AVGI
Electland Part Code 287618
Electland Part Number NYE_F6123AVGI
Category RF Transceiver ICs
Description - RF Receiver 14.4GHz ~ 17.3GHz 63-FCCSP (4.6x3.8)
Datasheet Download

Product Attributes

Category RF and Wireless RF Transceiver ICs
Frequency 14.4GHz ~ 17.3GHz
Voltage - Supply 2.1V ~ 2.5V
Operating Temperature -40°C ~ 85°C
Mounting Type Surface Mount
Package / Case 63-VFBGA, FCCSPBGA
Supplier Device Package 63-FCCSP (4.6x3.8)
Applications General Purpose
Data Interface SPI
Packaging FCBGA-63
Tariff Active False
ReachStatus REACH Unaffected
RohsStatus ROHS3 Compliant
ExportControlClassNumber 5A991G
HtsusCode 8542.39.0060
Weight 0.0005g

Introduction

  • Renesas applies the Smart Silicon™ approach to leverage best-in-class technologies for a differentiated RF product portfolio.
  • Renesas DSAs virtually eliminate the transient overshoot that occurs during MSB attenuation state transitions in standard DSAs, preventing amplifier damage and data loss at the ADC.
  • Renesas VGAs maintain a nearly flat noise figure as gain is reduced in critical regions, significantly relaxing radio engineer design constraints by improving SNR.
  • Renesas RF amplifiers and RF mixers improve SNR by reducing noise floor and third-order intermodulation distortion — critical in congested spectrum environments where it enhances QoS and unlocks underutilized spectrum.
  • Renesas VGAs maintain consistently high linearity during gain adjustment, preventing intermodulation distortion from degrading as gain is reduced.
  • Renesas RF switches maintain a nearly constant impedance when transitioning between RF ports — controlling impedance during switching to minimize VSWR and transients, improving switching reliability, reducing voltage stress on downstream components, and enhancing overall system performance.
  • Renesas amplifiers leverage KGAIN technology to maintain near-constant gain across temperature variations, allowing temperature dependence to be controlled by design and providing improved tolerance and relative immunity to process variation — particularly suited for large signal chains.
  • Amplifiers are critical components in radio cards across various architectures. Low-power, versatile, high-performance amplifiers are essential for large-scale MIMO solutions in 5G wireless systems and other RF applications such as WiFi connectivity, radar, and test & measurement. Renesas offers RF amplifiers with a wide range of gain, noise figure, and linearity characteristics in differential or single-ended input impedance configurations. Differentiated interface amplifiers feature built-in wideband baluns for broadband applications with differential inputs and outputs, with select products incorporating innovative Zero-Distortion™ technology to achieve high output IP3 at very low current consumption.
  • Renesas offers digitally controlled IF and RF VGAs featuring FlatNoise™ technology, an innovative approach that prevents noise degradation as gain is reduced. These low-noise devices improve QoS and relax downstream data converter SNR requirements to lower system cost. Select digital VGAs incorporate patented Glitch-Free™ technology, reducing transient glitches by up to 95% during MSB transitions to eliminate attenuation setting overshoot in transmit and/or receive paths.
  • Renesas offers a broad portfolio of monolithic silicon RF attenuators with digital or analog control. All RF attenuators feature wide bandwidth, low insertion loss, low error, high linearity, and high attenuation accuracy. Patented Glitch-Free™ technology reduces transient glitches by up to 95% during MSB transitions, eliminating attenuation setting overshoot in transmit and/or receive paths — enabling customers to simplify software interfaces, improve reliability, limit overrange conditions at data converter inputs, and protect costly subcomponents such as power amplifiers from damage.
  • Renesas integrated TRx ICs leverage multiple key technology innovations — including Zero-Distortion™ mixers combined with inter-stage filtering and a proprietary DVGA — whose synergistic interaction greatly benefits 2G/3G/4G MIMO and multi-carrier base station receivers.

Features

  • Circuit-level innovation: improved system-level performance and repeatability, reduced power consumption, enhanced reliability
  • Smart Silicon™ innovation: unique product solutions using optimal process technologies, achieving best-in-class performance from SOI, GaAs, GaN, or SiGe
  • Select RF amplifiers feature innovative Zero-Distortion™ technology, delivering high output IP3 at low current consumption
  • Select digital VGAs employ patented Glitch-Free™ technology, reducing transient "glitches" by up to 95% during MSB transitions, eliminating attenuation setting overshoot
  • VGAs with FlatNoise™ technology maintain noise performance as gain is reduced
  • VGAs maintain consistently high linearity, with OIP3 held constant in critical regions as gain is reduced
  • RF switches maintain near-constant impedance, minimizing VSWR and transients during switching
  • Amplifiers with KGAIN technology automatically reduce S21 variation over temperature, maintaining near-constant gain

Applications

  • Massive MIMO solutions for 5G wireless systems
  • WiFi connectivity
  • Radar
  • Test and measurement
  • Receiver and transmitter systems for cellular base stations and other wireless infrastructure equipment
  • 2G/3G/4G MIMO and multi-carrier base station receivers

In-Stock Suppliers

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QTY USD TOMAN
1+$135.337,566,610 تومان
200+$52.3614,537,970 تومان
490+$50.5214,027,090 تومان
980+$49.6113,774,420 تومان

Qty in reel: 490pcs/reel