آر اف (فرکانس رادیویی) و بی‌سیم سوییچ آر‌اف

Product Attributes

Introduction

The BGS12PL6 general purpose RF MOS power switch is designed to cover a broad range of high power applications from 30 MHz to 4 GHz, mainly in the transmit path of GSM, WCDMA and LTE mobile phones. The symmetric design of its single pole double throw configuration offers high design flexibility. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The 0.1 dB compression point exceeds the switch’s maximum input power level of 35 dBm, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of 0.36 dB in the 1 GHz, 0.46 dB in the 2 GHz and 0.6 dB in the 3 GHz

Features

• 2 high-linearity TRx paths with power handling capability of up to 35 dBm
• All ports fully symmetrical
• Low insertion loss
• Low harmonic generation
• High port-to-port isolation
• 30 MHz to 4 GHz coverage
• High ESD robustness
• On-chip control logic
• Very small leadless and halogen free package TSLP-6-4 (0.7x1.1mm²) with super low height of 0.31 mm
• No decoupling capacitors required if no DC applied on RF lines
• RoHS compliant package