آر اف (فرکانس رادیویی) و بی‌سیم سوییچ آر‌اف

Product Attributes

Introduction

The MA4AGSW4 is an Aluminum-Gallium-Arsenide, single pole, triple throw (SP4T), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using MACOM’s hetero-junction technology. AlGaAs technology produces a switch with less loss than a device fabricated using conventional GaAs processes. As much as a 0.3 dB reduction in insertion loss can be realized at 50 GHz. This device is fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes within the chip exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage during handling and assembly to the diode junction and the chip anode air-bridges. Off chip bias circuitry is required. The high electron mobility of AlGaAs and the low capacitance of the PIN diodes used makes this switch ideal for fast response, high frequency, multi-throw switch designs. AlGaAs PIN diode switches are an ideal choice for switching arrays in radar systems, radiometers, test equipment and other multi-assembly components.

Features

• Ultra Broad Bandwidth: 50 MHz to 50 GHz
• Insertion Loss: 0.7 dB
• Isolation: 31 dB @ 50 GHz
• Low Current Consumption: - 10 mA for Low Loss State, +10 mA for Isolation State
• MACOMs Unique AlGaAs Hetero-Junction Anode Technology
• Silicon Nitride Passivation
• Polymer Scratch Protection
• RoHS Compliant

Applications

• ISM