آر اف (فرکانس رادیویی) و بی‌سیم سوییچ آر‌اف

Product Attributes

Introduction

NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package.

Features

• Leadless ultra small plastic SMD package 1.0 mm × 0.6 mm × 0.34 mm
• Low noise high gain microwave transistor
• Noise figure (NF) = 0.75 dB at 6 GHz
• High maximum power gain (Gp(max)) of 15.8 dB at 6 GHz
• Excellent linearity in WiFi LNA from 5 GHz to 5.9 GHz:
  • input third - order intercept point (IP₃) = 15 dBm
  • input power at 1 dB gain compression (Pi(1dB)) = 0 dBm
• 110 GHz fT silicon germanium technology

Applications

• Wi - Fi/WLAN
• WiMAX
• LNA for GPS, GLONASS, Galileo and Compass (BeiDou)
• DBS (2nd LNA stage, mixer stage, DRO)
• SDARS
• RKE
• AMR/Zigbee
• LNA for microwave communications systems
• Low current battery equipped applications
• Microwave driver / buffer applications