آر اف (فرکانس رادیویی) و بی‌سیم سوییچ آر‌اف

Product Attributes

Introduction

The ADRF5141 is a reflective, SPDT switch manufactured in the silicon process. The ADRF5141 is used in transmit and receive applications with an integrated power limiter on the receive path. The ADRF5141 operates from 6 GHz to 12 GHz. The RX arm with the integrated power limiter has a flat leakage of 17 dBm with a low insertion loss of 1.4 dB at 8 GHz to 11 GHz. The TX arm has an insertion loss of 0.9 dB at 8 GHz to 11 GHz. The ADRF5141 draws a low current of 13 μA on the positive supply of +3.3 V and 360 μA on the negative supply of -3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls. The ADRF5141 requires no additional driver circuitry, making it an ideal alternative to gallium nitride (GaN) and PIN diode-based switches. The ADRF5141 comes in a 20-lead, 3.0 mm x 3.0 mm, RoHS-compliant, land grid array (LGA) package and can operate from -40℃ to +105℃.

Features

• High-power transmit and receive switch with an integrated power limiter on receive path
• Frequency range: 6 GHz to 12 GHz
• Reflective 50 Ω design
• Low insertion loss
  • TX to ANT: 0.9 dB at 8 GHz to 11 GHz
  • ANT to RX: 1.4 dB at 8 GHz to 11 GHz
• High isolation: 55 dB typical for TX to RX when TX selected
• High-power handling (TCASE = 50℃)
  • Input at TX: pulsed 40 dBm, >100 ns pulse width at 15% duty cycle
  • Input at ANT: pulsed 40 dBm, >100 ns pulse width at 15% duty cycle
• RX flat leakage: 17 dBm
• High linearity
  • Input P0.1dB at TX arm: 41 dBm
• Fast switching time: 50 ns
• Fast response and recovery time: <10 ns
• Dual-supply, with no low-frequency spurious
• Positive control interface: CMOS-/LVTTL-compatible
• 20-lead, 3 mm x 3 mm LGA package
• Pin compatible with the ADRF5144

Applications

• X-band communications and radars
• Electronic warfare
• Satellite communications
• GaN and PIN diode replacement