آر اف (فرکانس رادیویی) و بی‌سیم سوییچ آر‌اف

Product Attributes

Introduction

The MSW200x-200 series surface-mount silicon PIN diode SP2T switches handle high-power signals in the 50 MHz to 1 GHz, 400 MHz to 4 GHz, and 2 to 6 GHz bands, suitable for transmit-receive switching, active receiver protection, and other applications. This series employs a proven hybrid manufacturing process that integrates high-voltage PIN diodes and passive components within a ceramic substrate. These low-profile, compact surface-mount assemblies offer superior small-signal and large-signal performance compared to QFN-packaged MMIC devices. The SP2T switches feature an asymmetric topology designed to minimize insertion loss in the transmit-to-antenna path and maximize transmit-to-receive isolation. The extremely low thermal resistance of the PIN diodes (< 10°C/W) enables reliable handling of 50 dBm CW RF incident power and 53 dBm peak RF incident power in cold-switching applications at TA = 85°C. The low PIN diode series resistance (< 0.8 Ω), combined with long minority carrier lifetime (> 2 µs), delivers an input third-order intercept point greater than 65 dBm. These SP2T switches are designed for high average power and high peak power switching applications, operating across three frequency bands from 50 MHz to 6 GHz, and are suited for high-volume SMT reflow soldering manufacturing. These products are robust and capable of reliable operation in commercial and industrial environments.

Features

• Wide frequency range: 50 MHz to 6 GHz, divided into 3 bands
• Compact surface-mount SP2T switch: 8 mm × 5 mm × 2.5 mm
• Higher average power handling than plastic-packaged devices
• MMIC switch: 125 W CW
• High RF peak power: 500 W
• Low insertion loss: 0.25 dB
• High third-order intercept point: 65 dBm
• Positive-voltage-only operation: 5 V and 28 V to 125 V
• RoHS compliant