آر اف (فرکانس رادیویی) و بی‌سیم سوییچ آر‌اف

Product Attributes

Introduction

The MSW200x-200 series surface-mount silicon PIN diode SP2T switches handle high-power signals from 50 MHz to 1 GHz (MSW2000), 400 MHz to 4 GHz (MSW2001), and 2 to 6 GHz (MSW2002), suitable for transmit-receive switching, active receiver protection, and other applications. This series employs a proven hybrid manufacturing process that integrates high-voltage PIN diodes and passive components within a ceramic substrate. These low-profile, compact surface-mount components offer superior small-signal and large-signal performance compared to MMIC devices in QFN packages. The SP2T switches feature an asymmetric topology designed to minimize insertion loss in the transmit-to-antenna path and maximize isolation in the transmit-to-receive path. The extremely low thermal resistance (<10°C/W) of the PIN diodes in these devices enables reliable handling of 50 dBm CW RF incident power and 53 dBm peak RF incident power in cold-switching applications at TA = 85°C. The low PIN diode series resistance (<0.8 Ω), combined with long minority carrier lifetime (>2 µs), delivers an input third-order intercept point exceeding 65 dBm.

The MSW200x-200 series SP2T switches are designed for high average power and high peak power switching applications, operating across three frequency bands from 50 MHz to 6 GHz, and are suitable for high-volume SMT reflow soldering manufacturing. These rugged devices are built for reliable operation in commercial and industrial environments.

Features

• Wide frequency range: 50 MHz to 6 GHz in 3 bands
• Compact surface-mount SP2T switch: 8 mm L × 5 mm W × 2.5 mm H
• Higher average power handling than plastic-packaged MMIC switches: 125 W CW
• High RF peak power: 500 W
• Low insertion loss: 0.25 dB
• High IIP3: 65 dBm
• Positive-only supply voltages: 5 V and 28 V to 125 V
• RoHS compliant