| Category | RF and Wireless RF Mixers |
|---|---|
| RF Type | Radar |
| Frequency | 20GHz ~ 42GHz |
| Number of Mixers | 2 |
| Noise Figure | 12dB |
| Secondary Attributes | Up/Down Converter |
| Mounting Type | Surface Mount |
| Package / Case | 25-LFLGA Exposed Pad |
| Supplier Device Package | 25-LGA-CAV (4x4) |
| Operating Temperature | -40℃~+85℃ |
| Features | I/Q quadrature mixing;Image rejection;Single-ended/Differential Interface Integration |
| IP3 | 24dBm |
| LO Frequency Range | 20GHz~42GHz |
| IF Frequency Range | 0Hz~5GHz |
| RF Frequency Range | 20GHz~42GHz |
| Isolation(L-R) | 42dB |
| Isolation(L-I) | 45dB |
| Gain/Loss | -9dB |
| Packaging | LGA-25(4x4) |
| Tariff Active | True |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 3 (168 Hours) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8542.39.0090 |
| Weight | 0.0005g |
The HMC8192LG is a passive, wideband, inphase/quadrature (I/Q), monolithic microwave integrated circuit (MMIC) mixer that can be used either as an image rejection mixer for receiver operations or as a single - sideband upconverter for transmitter operations. With a radio frequency (RF) and local oscillator (LO) range of 20 GHz to 42 GHz, and an intermediate frequency (IF) bandwidth of dc to 5 GHz, the HMC8192LG is ideal for applications requiring a wide frequency range, excellent RF performance, and a simple design with fewer components and a small printed circuit board (PCB) footprint. A single HMC8192LG can replace multiple narrow - band mixers in a design. The inherent I/Q architecture of the HMC8192LG offers excellent image rejection, eliminating the need for expensive filtering for unwanted sidebands. The mixer also provides excellent LO to RF and LO to IF isolation and reduces the effect of LO leakage to ensure signal integrity. As a passive mixer, the HMC8192LG does not require any dc power sources. The HMC8192LG offers a lower noise figure compared to an active mixer, ensuring superior dynamic range for high performance and precision applications. The HMC8192LG is fabricated on a gallium arsenide (GaAs), metal semiconductor field effect transistor (MESFET) process and uses mixer cells and a 90° hybrid. The HMC8192LG is available in a compact, 4.00 mmx4.00 mm, 25 - terminal land grid array cavity (LGA_CAV) package and operates over a - 40℃ to + 85℃ temperature range.
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $47.48 | 13,183,020 تومان |
| 200+ | $18.37 | 5,100,510 تومان |
| 500+ | $17.73 | 4,922,810 تومان |
| 1000+ | $17.41 | 4,833,960 تومان |