| Category | RF and Wireless RF Mixers |
|---|---|
| RF Type | CATV |
| Frequency | 136MHz ~ 941MHz |
| Number of Mixers | 1 |
| Current - Supply | 9.5mA |
| Voltage - Supply | 2.9V~3.1V |
| Mounting Type | Surface Mount |
| Package / Case | 20-VFQFN Exposed Pad |
| Supplier Device Package | 20-QFN (4x4) |
| Operating Temperature | -40℃~+85℃ |
| Features | Assemble the vibration buffer;Single-ended/Differential Interface Integration |
| Packaging | QFN-20-EP(4x4) |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8542.39.0090 |
| Weight | 0.0005g |
The PE4152 is a high linearity quad metal-oxide-semiconductor field-effect transistor (MOSFET) mixer with an integrated local oscillator (LO) amplifier. The LO amplifier allows for LO input drive levels of less than 0 dBm to produce third-order intercept point (IIP3) values similar to a quad MOSFET array driven with a 15 dBm LO drive. The PE4152 operates with differential signals at the radio frequency (RF) and intermediate frequency (IF) ports and the integrated LO buffer amplifier drives the mixer core. It can be used as an upconverter or a downconverter.
The PE4152 also offers an integrated LO amplifier bypass option providing additional flexibility for low power or increased linearity operation. The bypassed LO amplifier allows superior LO to RF and LO to IF isolation levels relative to the enabled mode.
The PE4152 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS.
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $4.39 | 1,218,900 تومان |
| 200+ | $1.7 | 472,010 تومان |
| 500+ | $1.64 | 455,350 تومان |
| 1000+ | $1.61 | 447,020 تومان |