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ADI ADRF5519BCPZN

آر اف (فرکانس رادیویی) و بی‌سیم فرانت‌اند آر‌اف (ال‌ان‌ای و پی‌ای)

ADI ADRF5519BCPZN

Manufacturer ADI
Mfr. Part Number ADRF5519BCPZN
Electland Part Code 276889
Electland Part Number NYE_ADRF5519BCPZN
Category RF Front End (LNA + PA)
Description RF Front End 2.3GHz ~ 2.8GHz General Purpose 40-LFCSP-VQ (6x6)
Datasheet Download

Product Attributes

Category RF and Wireless RF Front End (LNA + PA)
RF Type General Purpose
Frequency 2.3GHz ~ 2.8GHz
Features Integrated low noise amplifier;Integrated RF switch;Multi-band support
Package / Case 40-VFQFN Exposed Pad, CSP
Supplier Device Package 40-LFCSP-VQ (6x6)
Operating Temperature -40℃~+105℃
Voltage - Supply 4.75V~5.25V
Frequency Range 2.3GHz~2.8GHz
Packaging LFCSP-40-VQ(6x6)
Tariff Active True
ReachStatus REACH Unaffected
RohsStatus ROHS3 Compliant
MoistureSensitivityLevel 3 (168 Hours)
ExportControlClassNumber 5A991B
HtsusCode 8542.39.0070
Weight 0.0765g

Introduction

The ADRF5519 is a dual-channel, integrated RF, front-end multichip module designed for time division duplexing (TDD) applications that operates from 2.3 GHz to 2.8 GHz. The ADRF5519 is configured in dual channels with a cascading twostage low noise amplifier (LNA) and a high power silicon singlepole, double-throw (SPDT) switch.

In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure (NF) of 1.0 dB and a high gain of 35 dB at 2.6 GHz with an output third-order intercept point (OIP3) of 32 dBm (typical). In low gain mode, one stage of the two-stage LNA is in bypass, providing 14 dB of gain at a lower current of 36 mA. In power-down mode, the LNAs are turned off and the device draws 12 mA.

In transmit operation, RF inputs are connected to a termination pin (ANT-CHA or ANT-CHB connected to TERM-CHA or TERM-CHB, respectively). The switch provides a low insertion loss of 0.5 dB and handles a long-term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 43 dBm for full lifetime operation.

The device comes in a RoHS-compliant, compact, 6 mm × 6 mm, 40-lead LFCSP package.

Features

  • Integrated dual-channel RF front end
  • 2-stage LNA and high power silicon SPDT switch
  • On-chip bias and matching
  • Single-supply operation
  • High power handling at case temperature (T_CASE) = 105 ℃
  • LTE average power (9 dB PAR) full lifetime: 43 dBm
  • Gain
    • High gain mode: 35 dB typical at 2.6 GHz
    • Low gain mode: 14 dB typical at 2.6 GHz
  • Low noise figure
    • High gain mode: 1.0 dB typical at 2.6 GHz
    • Low gain mode: 1.0 dB typical at 2.6 GHz
  • High isolation
    • RXOUT-CHA and RXOUT-CHB: 45 dB typical
    • TERM-CHA and TERM-CHB: 60 dB typical
  • Low insertion loss: 0.5 dB typical at 2.6 GHz
  • High OIP3: 32 dBm typical
  • Power-down mode and low gain mode
  • Low supply current
    • High gain mode: 110 mA typical at 5 V
    • Low gain mode: 36 mA typical at 5 V
    • Power-down mode: 12 mA typical at 5 V
  • Positive logic control
  • 6 mm x 6 mm, 40-lead LFCSP package
  • Pin compatible with the ADRF5545A and ADRF5549 10 W versions

Applications

  • Wireless infrastructure
  • TDD massive multiple input and multiple output and active antenna systems
  • TDD-based communication systems

In-Stock Suppliers

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