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ADI ADRF5547BCPZN

آر اف (فرکانس رادیویی) و بی‌سیم فرانت‌اند آر‌اف (ال‌ان‌ای و پی‌ای)

ADI ADRF5547BCPZN

Manufacturer ADI
Mfr. Part Number ADRF5547BCPZN
Electland Part Code 276846
Electland Part Number NYE_ADRF5547BCPZN
Category RF Front End (LNA + PA)
Description RF Front End 3.7GHz ~ 5.3GHz General Purpose 40-LFCSP-VQ (6x6)
Datasheet Download

Product Attributes

Category RF and Wireless RF Front End (LNA + PA)
RF Type General Purpose
Frequency 3.7GHz ~ 5.3GHz
Features Integrated low noise amplifier;Integrated RF switch
Package / Case 40-VFQFN Exposed Pad, CSP
Supplier Device Package 40-LFCSP-VQ (6x6)
Operating Temperature -40℃~+105℃
Frequency Range 3.7GHz~5.3GHz
Packaging LFCSP-40(6x6)
Tariff Active False
ReachStatus REACH Unaffected
RohsStatus ROHS3 Compliant
MoistureSensitivityLevel 3 (168 Hours)
ExportControlClassNumber EAR99
HtsusCode 8542.39.0090
Weight 0.0765g

Introduction

The ADRF5547 is a dual-channel, integrated RF, front end multichip module designed for time division duplexing (TDD) applications that operates from 3.7 GHz to 5.3 GHz. The ADRF5547 is configured in dual channels with a cascading two-stage low noise amplifier (LNA) and a high power silicon, single-pole, double-throw (SPDT) switch. In high gain mode, the cascaded, two-stage LNA and switch offer a low noise figure of 1.6 dB and high gain of 33 dB at 4.6 GHz with an output third order intercept point (OIP3) of 31 dBm (typical). In low gain mode, one stage of the two-stage LNAs is in bypass, providing 18 dB gain at lower current of 36 mA. In power-down mode, the LNAs are turned off and the device draws 12 mA. In transmit operation, when RF inputs are connected to a termination pin (TERM-ChA or TERM-ChB), the switch provides a low insertion loss of 0.50 dB and handles long term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 40 dBm for full lifetime operation and 43 dBm for single event < 10 sec LNA protection operation. The device comes in an RoHS compliant, compact, 40-lead, 6 mm x 6 mm LFCSP.

Features

  • Integrated dual-channel RF front end 2-stage LNA and high power SPDT switch
  • On-chip bias and matching
  • Single-supply operation
  • Gain: High gain mode: 33 dB typical at 4.6 GHz; Low gain mode: 18 dB typical at 4.6 GHz
  • Low noise figure: High gain mode: 1.6 dB typical at 4.6 GHz; Low gain mode: 1.6 dB typical at 4.6 GHz
  • High channel to channel isolation: Between RxOUT-ChA and RxOUT-ChB: 45 dB typical; Between TERM-ChA and TERM-ChB: 53 dB typical
  • Low insertion loss: 0.50 dB typical at 4.6 GHz
  • High power handling at Γ (overline)_CASE = 105 ℃: Full lifetime LTE average power (9 dB PAR): 40 dBm; Single event (ζ < 10 sec operation) LTE average power (9 dB PAR): 43 dBm
  • High OIP3: 31 dBm typical
  • Power-down mode and low gain mode for LNA
  • Low supply current: High gain mode: 86 mA typical at 5 V; Low gain mode: 36 mA typical at 5 V; Power-down mode: 12 mA typical at 5 V
  • Positive logic control
  • 40-lead, 6 mm x 6 mm LFCSP

Applications

  • Wireless infrastructure
  • TDD massive multiple input and multiple output (MIMO) and active antenna systems
  • TDD-based communication systems

In-Stock Suppliers

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