آر اف (فرکانس رادیویی) و بی‌سیم تقویت‌کننده‌ آر اف

Product Attributes

Introduction

The HMC8119 is an integrated E-band gallium arsenide (GaAs) pseudomorphic (pHEMT) monolithic microwave integrated circuit (MMIC), in-phase/quadrature (I/Q) upconverter chip that operates from 81 GHz to 86 GHz. The HMC8119 provides a small signal conversion loss of 10 dB with 22 dBc of sideband rejection across the frequency band. The device uses an image rejection mixer that is driven by a 6×LO multiplier. Differential I and Q mixer inputs are provided. The inputs can be driven with differential I and Q baseband waveforms for direct conversion applications. Alternatively, the inputs can be driven using an external 90° hybrid and two external 180° hybrids for singlesideband applications. All data includes the effect of a 1 mil gold wire wedge bond on the intermediate frequency (IF) ports.

Features

• Conversion loss: 10 dB typical
• Sideband rejection: 22 dBc typical
• Input power for 1 dB compression (P1dB): 16 dBm typical
• Input third-order intercept (IP3): 24 dBm typical
• Input second-order intercept (IP2): −5 dBm typical
• 6× local oscillator (LO) leakage at RFOUT: −23 dBm typical
• RF return loss: 12 dB typical
• LO return loss: 20 dB typical
• Die size: 3.601 mm×1.609 mm×0.05 mm

Applications

• E-band communication systems
• High capacity wireless backhaul
• Test and measurement