آر اف (فرکانس رادیویی) و بی‌سیم تقویت‌کننده‌ آر اف

Product Attributes

Introduction

The HMC8120 is an integrated E-band, gallium arsenide (GaAs), pseudomorphic (pHEMT), monolithic microwave integrated circuit (MMIC), variable gain amplifier and/or driver amplifier that operates from 71 GHz to 76 GHz. The HMC8120 provides up to 22 dB of gain, 21 dBm of output P1dB, 30 dBm of OIP3, and 22 dBm of PSAT while requiring only 250 mA from a 4 V power supply. Two gain control voltages (VCTL1 and VCTL2) are provided to allow up to 15 dB of variable gain control. The HMC8120 exhibits excellent linearity and is optimized for E-band communications and high capacity wireless backhaul radio systems. All data is taken with the chip in a 50 Ω test fixture connected via a 3 mil wide × 0.5 mil thick × 7 mil long ribbon on each port.

Features

• Gain: 22 dB typical
• Wide gain control range: 15 dB typical
• Output third-order intercept (OIP3): 30 dBm typical
• Output power for 1 dB compression (P1dB): 21 dBm typical
• Saturated output power (PSAT): 22 dBm typical
• DC supply: 4 V at 250 mA
• No external matching required
• Die size: 3.599 mm × 1.369 mm × 0.05 mm

Applications

• E-band communication systems
• High capacity wireless backhaul radio systems
• Test and measurement