آر اف (فرکانس رادیویی) و بی‌سیم تقویت‌کننده‌ آر اف

Product Attributes

Introduction

A gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two - stage reactively matched amplifier design approach enabling high power and power added efficiency to be achieved in a 5mm x 5mm, surface mount (QFN package).

Features

• 33 dB Small Signal Gain
• 21 W Typical PSAT Operation up to 50 V
• High Breakdown Voltage
• High Temperature Operation
• 5 mm × 5 mm Total Product Size

Applications

• Civil Pulsed Radar Amplifiers