آر اف (فرکانس رادیویی) و بی‌سیم تقویت‌کننده‌ آر اف

Product Attributes

Introduction

A gallium nitride (GaN), power amplifier that delivers 43 dBm (20 W) with more than 43% power added efficiency (PAE) across its 8.2 GHz to 11.8 GHz frequency range. It provides ±0.5 dB of gain flatness from 9.6 GHz to 11 GHz. It is optimized for pulsed applications and is packaged in an 18 - terminal, 7mm×7 mm, ceramic leadless chip carrier with heat sink [LCC_HS] that exhibits low thermal resistance and is compatible with surface - mount manufacturing techniques.

Features

• Internally matched and AC - coupled 20 W GaN power amplifier
• Integrated temperature - compensated RF power detector
• P₀UT with Pᵢₙ = 22 dBm: 43.5 dBm typical from 9.6 GHz to 11 GHz
• Small signal gain: 31 dB typical from 9.6 GHz to 11 GHz
• Power gain with Pᵢₙ = 22 dBm: 21.5 dB typical from 8.2 GHz to 11 GHz
• PAE: 46% typical from 9.6 GHz to 11 GHz
• Supply voltage: 28 V at 200 mA on 10% duty cycle
• 18 - terminal, 7mm×7 mm, LCC_HS package

Applications

• Weather radars
• Marine radars