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INFINEON BGAP2S30AE6327XTSA1

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INFINEON BGAP2S30AE6327XTSA1

Manufacturer Infineon
Mfr. Part Number BGAP2S30AE6327XTSA1
Electland Part Code 268594
Electland Part Number NYE_BGAP2S30AE6327XTSA1
Category RF Amplifiers
Description RF Amplifier IC 4G, 5G 3.3GHz ~ 4.2GHz PG-TSNP-16-13
Datasheet Download

Product Attributes

Category RF and Wireless RF Amplifiers
Frequency 3.3GHz ~ 4.2GHz
P1dB 28.5dBm
Gain 35dB
Noise Figure 3.2dB
RF Type 4G, 5G
Voltage - Supply 4.75V~5.25V
Current - Supply 121mA
Test Frequency 3.6GHz
Mounting Type Surface Mount
Package / Case 16-WFDFN Exposed Pad
Supplier Device Package PG-TSNP-16-13
Operating Temperature -40℃~+115℃
Frequency Range 33GHz~42GHz
Input Return Loss 18dB
Output Return Loss 17dB
IP3 34.1dBm
ReachStatus REACH Unaffected
RohsStatus ROHS3 Compliant
MoistureSensitivityLevel 1 (Unlimited)
ExportControlClassNumber 5A991G
HtsusCode 8542.33.0001
Weight 0.5g

Introduction

The product is a stand-alone pre-driver in package. The pre-driver is a two-stage amplifier designed to be used in the 56τ× line-up for base station applications as the pre-driver for the Doherty power amplifier. It has been designed in the INFINEON BiCMOS technology. Input and outputs are 50Ω single-ended.

Features

  • Operation frequency range: 3300 to 4200MHz
  • Gain: 35dB
  • Output P1dB: 28.5dBm
  • 50Ω single-ended input and output
  • 5V supply voltage
  • TSNP-16 leadless package (3.0×3.0 mm²)
  • BiCMOS Technology

Applications

  • 4G/5G
  • Cellular Infrastructure – Massive MIMO systems – Small cells

In-Stock Suppliers

NoyanElectronic
0 in stock
Supplier Part Number: NYE_BGAP2S30AE6327XTSA1

1 1
QTY USD TOMAN
1+$3.55985,670 تومان
200+$1.42394,270 تومان
500+$1.37380,390 تومان
1000+$1.35374,830 تومان

Qty in reel: 2000pcs/reel