آر اف (فرکانس رادیویی) و بی‌سیم تقویت‌کننده‌ آر اف

Product Attributes

Introduction

A high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a final or driver stage for 802.16 equipment in the 3.36 Hz to 3.8GHz bands. It can run from a 3V to 6V supply. Optimized on-chip impedance matching circuitry provides a 50Ω nominal RF input impedance. The external output match and bias adjustability allows load line optimization for other applications or over narrower bands. It features an output power detector, on/off power control and high RF overdrive robustness. This product is available in a RoHS Compliant and Green package with matte tin finish, designated by the “Z” package suffix.

Features

• P₁dB = 31 dBm at 5V
• 802.11a 54Mb/s 2.5% EVM Performance
• Pₒᵤₜ = 24 dBm, VCC = 5V, 340 mA, PAE 14.5%
• Pₒᵤₜ = 25dBm, VCC = 6V, 365mA, PAE 14.5%
• On-Chip Output Power Detector
• Robust - Survives RF Input Power = +15 dBm
• On Chip ESD Protection Class 2(2000V)
• Power Up/Down Control < 1μs
• Pin Compatible With SZA-2044 and SZA-5044

Applications

• 802.16 WiMAX Driver or Output Stage
• Fixed Wireless, WLL