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NXP BGU8L1X

آر اف (فرکانس رادیویی) و بی‌سیم تقویت‌کننده‌ آر اف

NXP BGU8L1X

Manufacturer NXP
Mfr. Part Number BGU8L1X
Electland Part Code 268263
Electland Part Number NYE_BGU8L1X
Category RF Amplifiers
Description RF Amplifier IC LTE, WiMax 728MHz ~ 960MHz 6-XSON (1.1x0.7)
Datasheet Download

Product Attributes

Category RF and Wireless RF Amplifiers
Frequency 728MHz ~ 960MHz
P1dB -3dBm
Gain 14.5dB
Noise Figure 0.7dB
RF Type LTE, WiMax
Voltage - Supply 1.5V~3.1V
Current - Supply 4.6mA
Test Frequency 882MHz
Mounting Type Surface Mount
Package / Case 6-XFDFN
Supplier Device Package 6-XSON (1.1x0.7)
Operating Temperature -40℃~+85℃
Frequency Range 728MHz~960MHz
Features Low-power mode;Bias control circuit;Electrostatic protection
Input Return Loss 14dB
Output Return Loss 20dB
IP3 2dBm
Packaging XSON-6(0.9x1.1)
Tariff Active False
ReachStatus REACH Unknown
RohsStatus Unknown
Weight 0.0005g

Introduction

The BGU8L1 is, also known as the LTE1001L, a Low-Noise Amplifier (LNA) for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8L1 requires one external matching inductor. The BGU8L1 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance. At low jamming power levels, it delivers 14 dB gain at a noise figure of 0.7 dB. During high-power levels, it temporarily increases its bias current to improve sensitivity. The BGU8L1 is optimized for 728 MHz to 960 MHz.

Features

  • Operating frequency from 728 MHz to 960 MHz
  • Noise figure = 0.7 dB
  • Gain = 14 dB
  • High input 1 dB compression point of -3 dBm
  • High in band IP3i of 2 dBm
  • Supply voltage 1.5 V to 3.1 V
  • Self-shielding package concept Integrated supply decoupling capacitor
  • Optimized performance at a supply current of 4.6 mA
  • Power-down mode current consumption <1 μA
  • Integrated temperature stabilized bias for easy design
  • Require only one input matching inductor
  • Output DC decoupled
  • ESD protection on all pins (HBM >2 kV)
  • Integrated matching for the output
  • Available in a 6-pin leadless package 1.1 mm×0.7 mm×0.37 mm; 0.4 mm pitch: SOT1232
  • 180 GHz transit frequency - SiGe:C technology
  • Moisture sensitivity level 1

Applications

  • LNA for LTE reception in smart phones
  • Feature phones
  • Tablet PCs
  • RF front-end modules

In-Stock Suppliers

NoyanElectronic
28 in stock
Supplier Part Number: NYE_BGU8L1X

1 1
QTY USD TOMAN
1+$0.340594,540 تومان
10+$0.332292,240 تومان
30+$0.327490,900 تومان
100+$0.32289,400 تومان

Qty in reel: 5000pcs/reel