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NXP BGU8009,115

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NXP BGU8009,115

Manufacturer NXP
Mfr. Part Number BGU8009,115
Electland Part Code 268258
Electland Part Number NYE_BGU8009,115
Category RF Amplifiers
Description RF Amplifier IC Galileo, GLONASS, GPS 1.559GHz ~ 1.61GHz 6-XSON, SOT1230 (1.1x0.9)
Datasheet Download

Product Attributes

Category RF and Wireless RF Amplifiers
Frequency 1.559GHz ~ 1.61GHz
P1dB -7dBm
Gain 18dB
Noise Figure 0.65dB
RF Type Galileo, GLONASS, GPS
Voltage - Supply 1.5V~3.1V
Current - Supply 4.4mA
Test Frequency 1.559GHz ~ 1.61GHz
Mounting Type Surface Mount
Package / Case 6-XFDFN
Supplier Device Package 6-XSON, SOT1230 (1.1x0.9)
Operating Temperature -40℃~+85℃
Frequency Range 1.559GHz~1.61GHz
Features Low-power mode;Electrostatic protection;Bias control circuit
Input Return Loss 17.5dB
Output Return Loss 23.5dB
IP3 6dBm
Packaging XSON-6(0.9x1.1)
ReachStatus REACH Unaffected
RohsStatus ROHS3 Compliant
MoistureSensitivityLevel 1 (Unlimited)
ExportControlClassNumber 7A994
HtsusCode 8542.33.0001
Weight 0.0085g

Introduction

The BGU8009 is, also known as the GPS1201M, a Low-Noise Amplifier (LNA) for GNSS receiver and LTE Band 32 down link applications. This BGU8009 is available in a small plastic 6-pin extremely thin leadless package. The BGU8009 requires one external matching inductor and one external decoupling capacitor. The BGU8009 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance when jamming signals from co-existing cellular transmitters are present. At low jamming power levels, it delivers 18 dB gain at a noise figure of 0.65 dB. During high jamming power levels, resulting, for example from a cellular transmit burst, it temporarily increases its bias current to improve sensitivity.

Features

  • Covers full GNSS L1 band, from 1559 MHz to 1610 MHz and LTE band 32 from 1452 MHz to 1496 MHz
  • Optionally also the GNSS lower L-band can be covered (from 1164 MHz to 1299 MHz) by adding additional matching components as described in the application note AN11353.
  • GNSS:
    • Noise figure = 0.65 dB
    • Gain 18 dB
    • High input 1 dB compression point of -7 dBm
    • High out of band |P3| of 6 dBm
  • LTE B32:
    • Noise figure = 0.65 dB
    • Gain 20 dB
    • High input 1 dB compression point of -8.5 dBm
  • Supply voltage 1.5 V to 3.1 V
  • Optimized performance at low supply current of 4.2 mA
  • Power-down mode current consumption <1 μA
  • Integrated temperature stabilized bias for easy design.
  • Requires only one input matching inductor and one supply decoupling capacitor
  • Input and output DC decoupled
  • ESD protection on all pins (HBM >2 kV)
  • Integrated matching for the output
  • Available in a 6-pins leadless package 1.1 mm×0.9 mm×0.47 mm; 0.4 mm pitch: SOT1230
  • 180 GHz transit frequency - SiGe:C technology
  • Moisture sensitivity level 1

Applications

  • Smart phones
  • Feature phones
  • Tablets
  • Digital still cameras
  • Digital video cameras
  • RF front-end modules
  • Complete GNSS modules
  • Personal health applications

In-Stock Suppliers

NoyanElectronic
83 in stock
Supplier Part Number: NYE_BGU8009,115

1 1
QTY USD TOMAN
1+$0.24768,580 تومان
10+$0.196754,610 تومان
30+$0.171947,730 تومان
100+$0.14740,820 تومان
500+$0.132636,820 تومان
1000+$0.12534,710 تومان

Qty in reel: 5000pcs/reel