| Manufacturer | pSemi |
|---|---|
| Mfr. Part Number | PE43205B-Z |
| Electland Part Code | 263494 |
| Electland Part Number | NYE_PE43205B-Z |
| Category | Attenuators |
| Description | RF Attenuators 0dB ~ 18dB 35 MHz ~ 6 GHz 50 Ohms 12-WFQFN Exposed Pad |
| Datasheet | Download |
| Category | RF and Wireless Attenuators |
|---|---|
| Attenuation Value | 0dB ~ 18dB |
| Frequency Range | 35 MHz ~ 6 GHz |
| Impedance | 50 Ohms |
| Package / Case | 12-WFQFN Exposed Pad |
| Packaging | QFN-12-EP(3x3) |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8542.39.0070 |
| Weight | 0.0265g |
The PE43205 is a 50Ω, HaRP technology-enhanced fast switching 2-bit RF Digital Step Attenuator (DSA) designed for use in 3G/4G wireless infrastructure and other high performance RF applications. This DSA is a pin-compatible upgraded version of the PE43204 with a wider frequency and power supply range, and extended operating temperature range. Covering an 18 dB attenuation range in 6 dB and 12 dB steps, it maintains high RF performance and low power consumption from 35 MHz through 6 GHz. PE43205 is offered in a 12-lead 3x3 mm QFN package. In addition, no external blocking capacitors are required if 0 VDC is present on the RF ports. The PE43205 is manufactured on pSemi’s UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate. pSemi’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS.
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $1.62 | 449,800 تومان |
| 10+ | $1.42 | 394,270 تومان |
| 30+ | $1.3 | 360,950 تومان |
| 100+ | $1.18 | 327,630 تومان |
| 500+ | $1.13 | 313,750 تومان |
| 1000+ | $1.1 | 305,420 تومان |