رله‌ رله‌ حالت‌جامد (اس اس آر)

Product Attributes

Introduction

The Photovoltaic DC Relay (PVD) is a single-pole, normally open solid-state relay designed to replace electromechanical relays for general-purpose analog signal switching. It employs a unique bidirectional (AC or DC) MOSFET power IC — known as the BOSFET — as the output switch. The BOSFET is controlled by a novel-structure photovoltaic generator, which is powered by radiation from a dielectrically isolated LED. The PVD overcomes the limitations of conventional and reed electromechanical relays while offering the advantages of solid-state relays, such as long service life, high operating speed, low pull-in power, no contact bounce, low thermoelectric voltage, and compact form factor. These advantages enable improved performance and innovative designs across a wide range of applications, including process control, multiplexing, telecommunications, automatic test equipment, and data acquisition. The PVD can switch analog signals ranging from thermocouple levels up to 300V peak DC. Signal frequencies extending into the RF range can be readily controlled, and switching rates up to 6kHz are achievable. The extremely low thermally generated offset voltage enhances measurement accuracy. The unique silicon technology developed by International Rectifier is at the heart of the PVD. The monolithic BOSFET incorporates a bidirectional N-channel power MOSFET output structure. In addition, the power IC die includes input circuitry for fast turn-off and gate protection functions. This section of the BOSFET die utilizes both bipolar and MOS technologies to implement NPN transistors, P-channel MOSFETs, resistors, diodes, and capacitors. The photovoltaic generator likewise employs International Rectifier's proprietary alloy multi-junction structure. The excellent current conversion efficiency of this technology enables the PVD microelectronic power IC relay to achieve very fast response times. This advanced semiconductor technology has given rise to an entirely new class of control device. Designers can now develop switching systems that meet new standards in both electrical performance and mechanical compactness.

Features

• BOSFET Power IC
• 10^10 operations
• 100μs operation time
• 3mW pull-in power
• 1000V/μs dv/dt
• No contact bounce
• 8-pin DIP package
• -40°C ~ 85°C
• UL recognized
• Part marking