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Product Attributes

Introduction

The PVR33 photovoltaic relay is a bipolar normally-open solid-state relay that serves as a replacement for electromechanical relays. It employs a unique bidirectional (AC or DC) MOSFET power integrated circuit — known as the BOSFET — as the output switch. The BOSFET is controlled by a novel-structure photovoltaic generator, which is powered by radiation emitted from a dielectrically isolated LED.

The PVR overcomes the limitations of reed relays while offering the advantages of solid-state relays, including long service life, high operating speed, low pull-in power, bounce-free switching, low thermoelectric voltage, and compact size. These advantages enable improved designs and innovative applications across process control, multiplexing, telecommunications, automatic test equipment, and data acquisition.

The PVR can switch analog signals ranging from thermocouple-level up to 300V peak AC or DC polarity. It can readily control signal frequencies extending into the RF range and supports switching rates up to 5kHz. The extremely low thermally generated offset voltage enhances measurement accuracy. The unique silicon technology developed by International Rectifier is at the heart of the PVR. The monolithic BOSFET incorporates a bidirectional N-channel power MOSFET output structure. In addition, the power IC die integrates input circuitry for fast turn-off and gate protection functions. This portion of the BOSFET die utilizes bipolar and MOS technologies to form NPN transistors, P-channel MOSFETs, resistors, diodes, and capacitors.

The photovoltaic generator likewise employs International Rectifier's unique alloyed multi-junction structure. The superior current conversion efficiency of this technology gives the PVR microelectronic power IC relay an exceptionally fast response speed.

This advanced semiconductor technology has created an entirely new class of control devices. Designers can now develop switching systems that meet new standards for both electrical performance and mechanical compactness.

Features

• BOSFET Power IC
• 10^10 operations
• 100μs operate time
• 0.2μV thermal offset
• 5mW pull-in power
• 1000V/μs dv/dt
• No contact bounce
• 16-pin DIP package
• -40°C ~ 85°C
• Part marking