اپتوالکترونیک دیود لیزر و ماژول لیزر

Product Attributes

Introduction

PGAD1S03H is a 905 nm pulsed semiconductor laser in a surface-mount package, belonging to a family of high-power laser diodes for laser ranging applications. The device features a multi-layer monolithic chip design, emitting at the near-infrared 905 nm wavelength. Its improved GaAs substrate structure delivers 8 W peak pulsed power at a 10 A drive current. The multi-layer chip design has an effective laser aperture of 75 µm × 1 µm, emitting through a single laser stripe to provide high power output from a small aperture. The laser chip is fabricated using MOCVD. This epoxy-encapsulated LLC (Leadless Laminate Carrier) package complements the PGA series hermetic metal or T1¾ plastic-packaged epi-cavity lasers, making it ideal for high-volume applications. Beam propagation has a 25° divergence angle perpendicular to the chip surface and 7.5° parallel to the chip surface. Output power exhibits excellent stability over a wide temperature range. The quantum well laser design provides rise and fall times well below 1 ns. However, the drive circuit layout and mounting inductance are dominant factors and should be designed according to the required optical pulse width. The 905 nm peak wavelength is near the peak responsivity of most silicon photodiodes. This laser diode is particularly well-suited for use with Excelitas EPI-APD C30737 series devices. It is ideal for applications where cost is a primary consideration and high-volume production capability is required. A laser chip not mounted in a circuit cannot emit light; light emission requires mounting into an electrically driven circuit. The optical output of the laser diode is proportional to the forward-biased pulsed current. A simple method to pass large currents through the laser on a nanosecond timescale is to discharge a large capacitor into the laser via a GaN-FET switch. A low-side driver is recommended for operating the laser. The voltage on the capacitor and the discharge time will determine the current through the laser. The laser will achieve optimal long-term reliability at or below room temperature. Adequate heat dissipation must be provided, especially when operating at maximum duty cycle. When narrow pulse widths are required, system designers must pay careful attention to minimizing circuit inductance. Keeping inductance low will reduce the peak voltage required to achieve the desired drive current.

Features

• Small emitter size for easy optical coupling
• Single laser stripe, 75 µm effective laser length
• Side and top mounting supported
• Concentrated emitter size for high-power aperture output
• Quantum well structure
• Excellent power-temperature stability
• RoHS compliant

Applications

• Time-of-flight measurement
• Laser ranging
• Laser scanning
• Infrared night vision illumination
• Laser therapy