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ONSEMI FOD8343T

Manufacturer	onsemi
Mfr. Part Number	FOD8343T
Electland Part Code	179960
Electland Part Number	NYE_FOD8343T
Category	Isolators - Gate Drivers
Description	4A Gate Driver Optical Coupling 5000Vrms 1 Channel 6-SOIC
Datasheet	Download

Product Attributes

Category	Isolators Isolators - Gate Drivers
Technology	Optical Coupling
Number of Channels	1
Voltage - Isolation	5000Vrms
Common Mode Transient Immunity (Min)	50kV/µs
Propagation Delay tpLH / tpHL (Max)	210ns, 210ns
Pulse Width Distortion (Max)	65ns
Rise / Fall Time (Typ)	38ns, 24ns
Current - Output High, Low	3A, 3A
Current - Peak Output	4A
Voltage - Forward (Vf) (Typ)	1.5V
Current - DC Forward (If) (Max)	25 mA
Voltage - Output Supply	10V ~ 30V
Operating Temperature	-40℃~+100℃
Mounting Type	Surface Mount
Package / Case	6-SOIC (0.268", 6.80mm Width)
Supplier Device Package	6-SOIC
Approval Agency	UR
Isolation Voltage(Vrms)	5kV
Voltage - Forward(Vf)	1.1V
Forward Current	25mA
Packaging	SOP-6-6.8mm
Tariff Active	False
ReachStatus	REACH Unaffected
RohsStatus	ROHS3 Compliant
MoistureSensitivityLevel	1 (Unlimited)
ExportControlClassNumber	EAR99
HtsusCode	8541.49.8000
Weight	0.204g

Introduction

The FOD8343 series is a 4.0 A maximum peak output current gate drive optocoupler, capable of driving medium-power IGBT/ MOSFETs. It is ideally suited for fast-switching driving of power IGBT and MOSFET used in motor-control inverter applications, and high-performance power systems. The FOD8343 series utilizes stretched body package to achieve 8 mm creepage and clearance distances (FOD8343T), and optimized IC design to achieve reliably high-insulation voltage and high-noise immunity. The FOD8343 series consists of an Aluminum Gallium Arsenide (AlGaAs) Light-Emitting Diode (LED) optically coupled to an integrated circuit with a high-speed driver for push-pull MOSFET output stage. The device is housed in a stretched body, 6-pin, small outline, plastic package.

Features

FOD8343T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation
4.0 A Maximum Peak Output Current Driving Capability for Medium-Power IGBT/MOSFET
Use of P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail
50 kV/μs Minimum Common Mode Rejection
Wide Supply Voltage Range: 10 V to 30 V
Fast Switching Speed Over Full Operating Temperature Range
210 ns Maximum Propagation Delay
65 ns Maximum Pulse Width Distortion
UnderVoltage Lockout (UVLO) with Hysteresis
Extended Industrial Temperate Range: -40°C to 100°C
Safety and Regulatory Approvals:
- UL1577, 5,000 VRMS for 1 Minute
- DIN EN/IEC60747-5-5, 1,140V Peak Working Insulation Voltage (Pending Approvals)