ارسال سریع به سراسر ایران پشتیبانی 24/7
ONSEMI FOD3184TSR2V

ایزولاتور ایزولاتور- درایور گیت

ONSEMI FOD3184TSR2V

Manufacturer onsemi
Mfr. Part Number FOD3184TSR2V
Electland Part Code 179850
Electland Part Number NYE_FOD3184TSR2V
Category Isolators - Gate Drivers
Description 3A Gate Driver Optical Coupling 5000Vrms 1 Channel 8-SMD
Datasheet Download

Product Attributes

Category Isolators Isolators - Gate Drivers
Technology Optical Coupling
Number of Channels 1
Voltage - Isolation 5000Vrms
Common Mode Transient Immunity (Min) 35kV/µs
Propagation Delay tpLH / tpHL (Max) 210ns, 210ns
Pulse Width Distortion (Max) 65ns
Rise / Fall Time (Typ) 38ns, 24ns
Current - Output High, Low 2.5A, 2.5A
Current - Peak Output 3A
Voltage - Forward (Vf) (Typ) 1.43V
Current - DC Forward (If) (Max) 25 mA
Voltage - Output Supply 15V ~ 30V
Operating Temperature -40℃~+100℃
Mounting Type Surface Mount
Package / Case 8-SMD, Gull Wing
Supplier Device Package 8-SMD
Approval Agency IEC/EN/DIN, UL
Voltage - Supply 15V~30V
Features Under-voltage lockout
Power Dissipation 295mW
Output Current 3A
CMTI(kV/us) 50kV/us
Isolation Voltage(Vrms) 5kV
Propagation Delay(tpd) 210ns;210ns
Input threshold current 7.5mA
Input Type DC
Voltage - Forward(Vf) 1.43V
Packaging SOP-8-2.54mm
ReachStatus REACH Unaffected
RohsStatus ROHS3 Compliant
MoistureSensitivityLevel 1 (Unlimited)
ExportControlClassNumber EAR99
HtsusCode 8541.49.8000
Weight 0.5g

Introduction

The FOD3184 is a high-speed MOSFET/IGBT gate drive optocoupler with 3A output current. It consists of an AlGaAs LED optically coupled to a CMOS detector with an integrated circuit power stage featuring PMOS and NMOS output power transistors. Ideal for high-frequency power drive MOSFETs/IGBTs in plasma display panels (PDPs), motor inverter control, and high-performance DC/DC converters. The device is housed in an 8-pin DIP package, compatible with 260°C reflow soldering processes and compliant with lead-free soldering requirements.

Features

  • High noise immunity with 50 kV/µs (typical) common mode rejection
  • Guaranteed operating temperature range: -40°C to +100°C
  • 3A peak output current for medium power MOSFET/IGBT
  • Fast switching speed – 210 ns (max) propagation delay – 65 ns max pulse width distortion
  • Fast output rise/fall times – reduced dynamic power dissipation
  • 250 kHz maximum switching frequency
  • Wide VDD operating range: 15 V to 30 V
  • P-channel MOSFET in output stage enables output voltage swing close to supply rails (rail-to-rail output)
  • Under-voltage lockout with hysteresis (UVLO) – optimized for IGBT drive
  • Safety and regulatory certifications – UL1577, 5,000 VACRMS, 1 minute – DIN EN/IEC 60747-5-2, 1,414 V peak working insulation voltage
  • Minimum creepage distance: 8.0 mm
  • Minimum insulation thickness: 8 mm to 16 mm (option TV or TSV)
  • Minimum insulation thickness: 0.5 mm

Applications

  • Plasma display panels
  • High-performance DC/DC converters
  • High-performance switch-mode power supplies
  • High-performance uninterruptible power supplies
  • Isolated power MOSFET/IGBT gate drives

In-Stock Suppliers

NoyanElectronic
0 in stock
Supplier Part Number: NYE_FOD3184TSR2V

1 1
QTY USD TOMAN
1+$0.7334203,630 تومان
200+$0.286679,580 تومان
700+$0.276976,880 تومان
1400+$0.271875,470 تومان

Qty in reel: 700pcs/reel