ایزولاتور ایزولاتور- درایور گیت

Product Attributes

Introduction

The SIC1181KQ and SIC1182KQ are single channel gate drivers for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. Up to ±8 A peak output drive current enables the product to drive devices with nominal currents of up to 600 / 800 A (typical). Additional features such as undervoltage lock-out (UVLO) for primary-side and secondary-side and rail-to-rail output with temperature and process compensated output impedance guarantee safe operation even in harsh conditions. Furthermore, this gate driver IC comes along with short-circuit protection (at and during turn-on phase) as well as overvoltage limitation by AAC advanced active clamping (at turn-off phase) through a single sensing pin. For SIC MOSFET with current-sense terminal, an adjustable over-current detection can be realized. The single channel SCALE-iDriver™ family SIC118xKQ drives SiC MOSFET semiconductor devices with a blocking voltage of up to 1200 V and provides reinforced isolation between controller and the semiconductor device. The logic input (PWM) command signal applied via IN and the primary supply voltage supplied via VCC are both referenced to GND. The working status of the semiconductor device and SCALE-iDriver is monitored via SO. Command signals are transferred from the primary (IN) to secondaryside via FluxLink isolation technology. GH supplies a positive gate voltage and charges the semiconductor gate during the turn-on process. GL supplies a negative gate voltage and discharges the gate during turn-off process. Short-circuit protection as well as overvoltage limitation can be implemented by connecting a network between SNS and drain terminal of the semiconductor device. In case of a turn-on event SNS senses short-circuits, which will lead to a driver initiated turn-off to protect the semiconductor device from short-circuit damage. In case of a turn-off event SNS senses turn-off overvoltages and limits them by AAC advanced active clamping) to a save value below the semiconductor devices blocking voltage. In case the semiconductor device offers a current-sense terminal, an adjustable over-current detection can be realized as alternative to a short-circuit monitoring.

Features

• ±8 A peak gate output current
• Integrated FluxLink™ technology providing reinforced isolation
• SiC MOSFET optimized Advanced Active Clamping
• Ultrafast short-circuit detection
• UVLO primary and secondary side
• Rail-to-rail stabilized output voltage
• Unipolar supply voltage for secondary-side
• Up to 150 kHz switching frequency
• Propagation delay jitter ±5 ns
• -40 °C to +125 °C operating ambient temperature
• High common-mode transient immunity
• eSOP package with 9.5 mm creepage and clearance, CTI 600
• Undervoltage lock-out protection for primary and secondary-side including fault feedback
• Over-current detection for SiC MOSFETs with current-sense terminal
• Ultrafast short-circuit monitoring, turn-off and reporting
• Overvoltage limitation during SiC MOSFET turn-off
• 100% production partial discharge test
• 100% production HIPOT compliance testing at 8000 V peak for 1 s
• Reinforced insulation VDE V 0884-17 pending
• UL 1577 recognized
• AEC Q -100 qualified for automotive grade level 1
• Halogen free and RoHS compliant

Applications

• Electric vehicle BEV traction drives
• Hybrid electric vehicle PHEV traction drives
• Electric vehicle on-board and off-board chargers