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ONSEMI FOD3184TSD

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ONSEMI FOD3184TSD

Manufacturer onsemi
Mfr. Part Number FOD3184TSD
Electland Part Code 179101
Electland Part Number NYE_FOD3184TSD
Category Isolators - Gate Drivers
Description 3A Gate Driver Optical Coupling 5000Vrms 1 Channel 8-SMD
Datasheet Download

Product Attributes

Category Isolators Isolators - Gate Drivers
Technology Optical Coupling
Number of Channels 1
Voltage - Isolation 5000Vrms
Common Mode Transient Immunity (Min) 35kV/µs
Propagation Delay tpLH / tpHL (Max) 210ns, 210ns
Pulse Width Distortion (Max) 65ns
Rise / Fall Time (Typ) 38ns, 24ns
Current - Output High, Low 2.5A, 2.5A
Current - Peak Output 3A
Voltage - Forward (Vf) (Typ) 1.43V
Current - DC Forward (If) (Max) 25 mA
Voltage - Output Supply 15V ~ 30V
Operating Temperature -40℃~+100℃
Mounting Type Surface Mount
Package / Case 8-SMD, Gull Wing
Supplier Device Package 8-SMD
Approval Agency UL
Voltage - Supply 15V~30V
Output Voltage 30V
Features Under-voltage lockout
Power Dissipation 295mW
Output Current 3A
CMTI(kV/us) 50kV/us
Isolation Voltage(Vrms) 5kV
Propagation Delay(tpd) 210ns;210ns
Input threshold current 7.5mA
Input Type DC
Reverse Voltage 5V
Forward Current(If) 25mA
Voltage - Forward(Vf) 1.43V
Packaging SMD-8P
Tariff Active False
ReachStatus REACH Unaffected
RohsStatus ROHS3 Compliant
MoistureSensitivityLevel 1 (Unlimited)
ExportControlClassNumber EAR99
HtsusCode 8541.49.8000
Weight 0.5g

Introduction

The FOD3184 is a 3A Output Current, High Speed MOSFET/IGBT Gate Drive Optocoupler. It consists of a aluminium gallium arsenide (AlGaAs) light emitting diode optically coupled to a CMOS detector with PMOS and NMOS output power transistors integrated circuit power stage. It is ideally suited for high frequency driving of power MOSFETS/IGBT used in Plasma Display Panels (PDPs), motor control inverter applications and high performance DC/DC converters. The device is packaged in an 8-pin dual in-line housing compatible with 260°C reflow processes for lead free solder compliance.

Features

  • High noise immunity characterized by 50kV/µs (Typ.) common mode rejection @VCM = 2,000V
  • Guaranteed operating temperature range of -40°C to +100°C
  • 3A peak output current for medium power MOSFET/IGBT
  • Fast switching speed – 210ns max. propagation delay – 65ns max pulse width distortion
  • Fast output rise/fall time – Offers lower dynamic power dissipation
  • 250kHz maximum switching speed
  • Wide VDD operating range from 15V to 30V
  • Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output)
  • Under voltage lockout protection (UVLO) with hysteresis – optimized for driving IGBTs
  • Safety and regulatory approvals – UL1577, 5,000 VACRMS for 1 min. – DIN EN/IEC 60747-5-2, 1,414 peak working insulation voltage • Minimum creepage distance of 8.0mm • Minimum clearance distance of 8mm to 16mm (option TV or TSV) • Minimum insulation thickness of 0.5mm

Applications

  • Plasma Display Panel
  • High performance DC/DC convertor
  • High performance switch mode power supply
  • High performance uninterruptible power supply
  • Isolated Power MOSFET/IGBT gate drive

In-Stock Suppliers

NoyanElectronic
0 in stock
Supplier Part Number: NYE_FOD3184TSD

1 1
QTY USD TOMAN
1+$1.41391,490 تومان
200+$0.5641156,620 تومان
500+$0.5456151,490 تومان
1000+$0.536148,820 تومان

Qty in reel: 1000pcs/reel