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ONSEMI FOD3184TSR2

Manufacturer	onsemi
Mfr. Part Number	FOD3184TSR2
Electland Part Code	178715
Electland Part Number	NYE_FOD3184TSR2
Category	Isolators - Gate Drivers
Description	3A Gate Driver Optical Coupling 5000Vrms 1 Channel 8-SMD
Datasheet	Download

Product Attributes

Category	Isolators Isolators - Gate Drivers
Technology	Optical Coupling
Number of Channels	1
Voltage - Isolation	5000Vrms
Common Mode Transient Immunity (Min)	35kV/µs
Propagation Delay tpLH / tpHL (Max)	210ns, 210ns
Pulse Width Distortion (Max)	65ns
Rise / Fall Time (Typ)	38ns, 24ns
Current - Output High, Low	2.5A, 2.5A
Current - Peak Output	3A
Voltage - Forward (Vf) (Typ)	1.43V
Current - DC Forward (If) (Max)	25 mA
Voltage - Output Supply	15V ~ 30V
Operating Temperature	-40℃~+100℃
Mounting Type	Surface Mount
Package / Case	8-SMD, Gull Wing
Supplier Device Package	8-SMD
Approval Agency	UL
Voltage - Supply	15V~30V
Features	Under-voltage lockout
Power Dissipation	295mW
Output Current	3A
Data Rate	250Kbps
CMTI(kV/us)	50kV/us
Isolation Voltage(Vrms)	5kV
Propagation Delay(tpd)	210ns;210ns
Input threshold current	7.5mA
Input Type	DC
Reverse Voltage	5V
Forward Current(If)	16mA
Voltage - Forward(Vf)	1.43V
Packaging	SMD-8P
Tariff Active	False
ReachStatus	REACH Unaffected
RohsStatus	ROHS3 Compliant
MoistureSensitivityLevel	1 (Unlimited)
ExportControlClassNumber	EAR99
HtsusCode	8541.49.8000
Weight	0.5g

Introduction

The FOD3184 is a 3A Output Current, High Speed MOSFET/IGBT Gate Drive Optocoupler. It consists of a aluminium gallium arsenide (AlGaAs) light emitting diode optically coupled to a CMOS detector with PMOS and NMOS output power transistors integrated circuit power stage. It is ideally suited for high frequency driving of power MOSFETS/IGBT used in Plasma Display Panels (PDPs), motor control inverter applications and high performance DC/DC converters. The device is packaged in an 8-pin dual in-line housing compatible with 260°C reflow processes for lead free solder compliance.

Features

High noise immunity characterized by 50kV/µs (Typ.) common mode rejection @VCM = 2,000V
Guaranteed operating temperature range of -40°C to +100°C
3A peak output current for medium power MOSFET/IGBT
Fast switching speed – 210ns max. propagation delay – 65ns max pulse width distortion
Fast output rise/fall time – Offers lower dynamic power dissipation
250kHz maximum switching speed
Wide VDD operating range from 15V to 30V
Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output)
Under voltage lockout protection (UVLO) with hysteresis – optimized for driving IGBTs
Safety and regulatory approvals – UL1577, 5,000 VACRMS for 1 min. – DIN EN/IEC 60747-5-2, 1,414 peak working insulation voltage • Minimum creepage distance of 8.0mm • Minimum clearance distance of 8mm to 16mm (option TV or TSV) • Minimum insulation thickness of 0.5mm