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Product Attributes

Introduction

The EiceDRIVER gate driver 1EDI3035AS is a high voltage galvanic isolated SiC-MOSFET driver designed for high voltage automotive applications. The device is based on coreless transformer (CT) technology providing 8 kV galvanic insulation between low voltage and high voltage domains. The IC supports up to 1200 V SiC-MOSFETs and is ideally suitable to drive the IGBT + SiC HybridPACK Drive G2 Fusion module. The device features a powerful output stage of up to 20 A peak current required for high power switches. A split output stage (TON, TOFF) allows different slew rates for switching on and switching off due to separate gate resistors. The low voltage domain (primary side) supports logic levels of 5 V as well as 3.3 V. At the high voltage domain (secondary side) it can drive the gate of SiC-MOSFETs directly. A short propagation delay of only 60 ns and a minimum pulse width of 150 ns offer high a switching frequency with minimum distortion of the PWM signal. The DESAT protection together with the configurable external soft turn-off feature prevents SiC-MOSFETs destruction in short-circuit events. The integrated active Miller clamping stage up to 10 A allows unipolar supply of the SiC-MOSFET. The device features a 12-bit ADC for temperature measurements or DC link measurements. Furthermore, the DATA interface provides detailed error diagnosis through a PWM signal. A large panel of integrated safety related features simplifies the design of ASIL D compliant systems. Safety inputs (SI1, SI2) at the primary side control the transition of the system to safe state. Additionally, the device offers a secondary side active short circuit (ASC) pin to trigger safe state also from the secondary side.

Features

• Galvanic isolated SiC-MOSFET driver using coreless transformer technology
• Single channel driver for SiC-MOSFETs up to 1200 V
• Low propagation delay 60 ns typically
• Split outputs TON and TOFF for independent turn-on and turn-off slew rates
• Integrated booster with up to 20 A peak current rail-to-rail output
• Integrated active Miller clamp supports unipolar switching
• Configurable external soft turn-off functionality
• 12-bit ADC for temperature measurement or DC link measurement
• CMTI up to 150 V/ns up to ±1200 V
• Reinforced insulation 8 kV peak according to DIN EN IEC 60747-17 (VDE 0884-17):2021-10
• 5.7 kV rms insulation according to UL 1577
• Combined secondary side active short circuit (ASC) and ADC input pin
• Integrated safety features up to ASIL B: Safety pins on primary side and secondary ASC
• Super fast DESAT including BIST
• Gate monitoring and output stage monitoring
• Shoot-through protection with integrated timeout
• Primary supply monitoring UVLO
• Secondary supply monitoring VCC2, VEE2 for OVLO and UVLO
• DATA interface for detailed error diagnosis and ADC readout via PWM signal
• 3.3 V and 5 V compatible I/O logic supply
• ISO 26262 Safety Element out of Context for safety requirements up to ASIL B
• Green Product (RoHS compliant)

Applications

• Traction inverters for HEV and EV using SiC or SiC + IGBT fusion technology
• Auxiliary inverters for HEV and EV using SiC or SiC + IGBT fusion technology