| Manufacturer | TI |
|---|---|
| Mfr. Part Number | ISO5451QDWRQ1 |
| Electland Part Code | 178294 |
| Electland Part Number | NYE_ISO5451QDWRQ1 |
| Category | Isolators - Gate Drivers |
| Description | 2.7A, 5.5A Gate Driver Capacitive Coupling 5700Vrms 1 Channel 16-SOIC |
| Datasheet | Download |
| Category | Isolators Isolators - Gate Drivers |
|---|---|
| Technology | Capacitive Coupling |
| Number of Channels | 1 |
| Voltage - Isolation | 5700Vrms |
| Common Mode Transient Immunity (Min) | 50kV/µs |
| Propagation Delay tpLH / tpHL (Max) | 110ns, 110ns |
| Rise / Fall Time (Typ) | 20ns, 20ns |
| Current - Output High, Low | 1.5A, 3.4A |
| Current - Peak Output | 2.7A, 5.5A |
| Voltage - Output Supply | 15V ~ 30V |
| grade | Automotive |
| Qualification | AEC-Q100 |
| Operating Temperature | -40℃~+125℃@(Ta) |
| Mounting Type | Surface Mount |
| Package / Case | 16-SOIC (0.295", 7.50mm Width) |
| Supplier Device Package | 16-SOIC |
| Approval Agency | CQC, CSA, TUV, UL, VDE |
| Voltage - Supply | 3V~5.5V;15V~30V |
| Features | Saturation fault detection;Miller clamp protection |
| Current - Output Low(IOL) | 5A |
| Current - Output High(IOH) | 2.5A |
| CMTI(kV/us) | 50kV/us |
| Isolation Voltage(Vrms) | 5700V |
| Driven Configuration | Low Side;High Side |
| Propagation Delay(tpd) | 110ns;110ns |
| Rise Time | 35ns |
| Fall Time | 37ns |
| Load Type | IGBT;MOSFET |
| Packaging | SOIC-16-300mil |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 2 (1 Year) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8542.39.0090 |
| Weight | 0.25g |
The ISO5451-Q1 is a 5.7-kV_PMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5-A source and 5-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage. An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overload condition. Upon a DESAT detect, the gate driver output is driven low to V_EE2 potential, turning the IGBT immediately off. When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a lowactive pulse at the RST input. When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to V_EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path, preventing IGBT to be dynamically turned on during high voltage transient conditions. The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low, otherwise this output is high. The ISO5451-Q1 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from -40℃ to +125℃ ambient.
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $0.963 | 267,380 تومان |
| 10+ | $0.9383 | 260,520 تومان |
| 30+ | $0.9219 | 255,970 تومان |
| 100+ | $0.9054 | 251,390 تومان |
| 500+ | $0.9424 | 261,660 تومان |
| 1000+ | $0.9133 | 253,580 تومان |